Invention Grant
- Patent Title: Flip-chip light emitting diode, manufacturing method of flip-chip light emitting diode and display device including flip-chip light emitting diode
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Application No.: US16533925Application Date: 2019-08-07
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Publication No.: US10998464B2Publication Date: 2021-05-04
- Inventor: Jinhee Kang , Jaephil Shim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2018-0093972 20180810
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/38 ; H01L33/44 ; H01L33/40 ; H01L25/16 ; H01L33/50 ; H01L33/32 ; H01L33/06

Abstract:
A flip-chip light emitting diode (LED), a display device including at least one flip-chip LED, and a method of manufacturing the LED. The flip-chip LED including a light-emitting layer; an n-type semiconductor layer laminated on a lower part of the light-emitting layer; a p-type semiconductor layer laminated on an upper part of the light-emitting layer; a first electrode that is electrically connected to the n-type semiconductor layer via a first contact hole formed in the LED; a second electrode that is electrically connected to the p-type semiconductor layer, and is electrically insulated from the first electrode; a metal layer provided in a first area, a second area, and a third area; a third electrode that is formed on the metal layer in the third area, is electrically connected to the metal layer, and is electrically insulated from the first electrode and the second electrode; and a plurality of insulating layers.
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Information query
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