- Patent Title: Doping and fabrication of diamond and C-BN based device structures
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Application No.: US16485052Application Date: 2018-02-05
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Publication No.: US11011514B2Publication Date: 2021-05-18
- Inventor: Jagdish Narayan
- Applicant: North Carolina State University
- Applicant Address: US NC Raleigh
- Assignee: North Carolina State University
- Current Assignee: North Carolina State University
- Current Assignee Address: US NC Raleigh
- Agency: Olive Law Group, PLLC
- International Application: PCT/US2018/016870 WO 20180205
- International Announcement: WO2018/148147 WO 20180816
- Main IPC: H01L27/06
- IPC: H01L27/06 ; C30B25/18 ; C30B29/04 ; H01L29/04 ; H01L29/16 ; H01L29/20 ; H01L29/267 ; H01L29/737 ; H01L29/76 ; H01L29/872
Abstract:
Certain embodiments include a cubic boron nitride (c-BN) device. The c-BN device includes a n/n+ Schottky diode and a n/p/n+ bipolar structure. The n/n+ Schottky diode and the /p/n+ bipolar structure are on a single-crystal diamond platform.
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