Invention Grant
- Patent Title: Fin field effect transistor (FinFET) device structure with hard mask layer over gate structure and method for forming the same
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Application No.: US16199551Application Date: 2018-11-26
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Publication No.: US11011636B2Publication Date: 2021-05-18
- Inventor: Cheng-Han Wu , Yu-Ho Chiang , Jyh-Huei Chen , Jhon-Jhy Liaw
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/08 ; H01L29/165 ; H01L29/417 ; H01L21/02 ; H01L21/306 ; H01L29/66
Abstract:
A method for forming a FinFET device structure is provided. The method for forming a FinFET device structure includes forming a fin structure over a substrate, and forming a source/drain (S/D) structure over the fin structure. The method for forming a FinFET device structure also includes forming an inter-layer dielectric (ILD) structure covering the S/D structure, and forming a gate structure over the fin structure and adjacent to the S/D structure. The method for forming a FinFET device structure further includes forming a first hard mask layer over the gate structure, and forming a second hard mask layer over the first hard mask layer. In addition, the method for forming a FinFET device structure includes etching the ILD structure to form an opening exposing the S/D structure. The opening and a recess in the second hard mask layer are formed simultaneously.
Information query
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