Invention Grant
- Patent Title: Method of fabricating an integrated circuit device by using a block copolymer to form a self-assembly layer
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Application No.: US16385386Application Date: 2019-04-16
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Publication No.: US11018020B2Publication Date: 2021-05-25
- Inventor: Seok-han Park
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2018-0117108 20181001
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/768 ; H01L27/108 ; H01L21/3105 ; H01L21/56 ; H01L49/02
Abstract:
A method of fabricating an integrated circuit device includes forming a mold layer on a main surface of a substrate. A first hole is formed in the mold layer having a first inner wall that has a first tilt angle. A first conductive pattern is formed in the first hole. A block copolymer layer is formed on the mold layer and the first conductive pattern. A self-assembly layer is formed having a first domain and a second domain by phase separation of the block copolymer layer. The first domain covers the first conductive pattern and the second domain covers the mold layer. A second hole is formed by removing the first domain, the second hole having a second inner wall that has a second tilt angle. A second conductive pattern is formed in the second hole.
Information query
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