- 专利标题: High pressure and high temperature anneal chamber
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申请号: US16378140申请日: 2019-04-08
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公开(公告)号: US11018032B2公开(公告)日: 2021-05-25
- 发明人: Jean Delmas , Steven Verhaverbeke , Kurtis Leschkies
- 申请人: Applied Materials, Inc.
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Patterson + Sheridan, LLP
- 主分类号: H01L21/67
- IPC分类号: H01L21/67 ; H01L21/677 ; F27B9/36 ; H01L21/324
摘要:
Embodiments of the disclosure relate to an apparatus and method for annealing one or more semiconductor substrates. In one embodiment, a processing chamber is disclosed. The processing chamber includes a chamber body enclosing an internal volume, a substrate support disposed in the internal volume and configured to support a substrate during processing, a gas panel configured to provide a processing fluid into the internal volume, and a temperature-controlled fluid circuit configured to maintain the processing fluid at a temperature above a condensation point of the processing fluid. The temperature-controlled fluid circuit includes a gas conduit fluidly coupled to a port on the chamber body at a first end and to the gas panel at a second end.
公开/授权文献
- US20190237345A1 HIGH PRESSURE AND HIGH TEMPERATURE ANNEAL CHAMBER 公开/授权日:2019-08-01
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