公开(公告)号：US11987489B2

公开(公告)日：2024-05-21

申请号：US18120229

申请日：2023-03-10

申请人： Applied Materials, Inc.

发明人： Jean Delmas ,  Bernard Frey

IPC分类号： B67D7/02 ,  B65D88/74 ,  B67D7/16 ,  B67D7/32 ,  B67D7/36 ,  B67D7/62 ,  B67D7/76 ,  B67D7/78 ,  B67D7/82 ,  H05B1/02

CPC分类号： B67D7/02 ,  B65D88/748 ,  B67D7/16 ,  B67D7/32 ,  B67D7/3272 ,  B67D7/36 ,  B67D7/62 ,  B67D7/76 ,  B67D7/78 ,  B67D7/82 ,  H05B1/0297

摘要： Methods and systems for the production and delivery of lithium metal of high purity are provided herein. In one or more embodiments, method for flowing liquid lithium to a processing chamber is provided and includes flowing liquid lithium from a lithium refill container to a liquid lithium delivery module, where the liquid lithium delivery module is fluidly coupled to the lithium refill container, and flowing the liquid lithium from the liquid lithium delivery module to the processing chamber. The liquid lithium delivery module contains a lithium storage region operable to store liquid lithium and containing a fluid supply line fluidly coupling an outlet port of a liquid lithium storage tank, and a flow meter positioned downstream from the lithium storage region along the fluid supply line and operable to monitor the flow of the liquid lithium through the fluid supply line.

公开(公告)号：US11424137B2

公开(公告)日：2022-08-23

申请号：US16417124

申请日：2019-05-20

申请人： Applied Materials, Inc.

发明人： Roman Gouk ,  Han-Wen Chen ,  Steven Verhaverbeke ,  Jean Delmas

IPC分类号： H01L21/67 ,  C11D11/00 ,  H01L21/02 ,  H01L21/687 ,  H01L21/677 ,  B08B7/00

摘要： Embodiments described herein generally relate to a processing chamber incorporating a small thermal mass which enable efficient temperature cycling for supercritical drying processes. The chamber generally includes a body, a liner, and an insulation element which enables the liner to exhibit a small thermal mass relative to the body. The chamber is also configured with suitable apparatus for generating and/or maintaining supercritical fluid within a processing volume of the chamber.

公开(公告)号：US11927885B2

公开(公告)日：2024-03-12

申请号：US17883422

申请日：2022-08-08

申请人： Applied Materials, Inc.

发明人： Roman Gouk ,  Jean Delmas ,  Steven Verhaverbeke ,  Chintan Buch

IPC分类号： G03F7/00 ,  B29C45/37 ,  B29C59/02 ,  B29K23/00 ,  H01L21/027 ,  H01L21/768

CPC分类号： G03F7/0002 ,  B29C45/372 ,  B29C59/022 ,  H01L21/0274 ,  H01L21/76817 ,  B29K2023/16

摘要： An imprint lithography stamp includes a stamp body having a patterned surface and formed from a fluorinated ethylene propylene copolymer. The imprint lithography stamp further includes a backing plate with a plurality of through-holes with portions of the stamp body extending into the through-holes to adhere the stamp body to the backing plate. The patterned surface of the stamp body has a plurality of protrusions extending from the stamp body, which are used to form high aspect ratio features at high processing temperatures. A mold design for forming the imprint lithography stamp and an injection molding process for forming the imprint lithography stamp are also provided.

公开(公告)号：US11454884B2

公开(公告)日：2022-09-27

申请号：US16849393

申请日：2020-04-15

申请人： Applied Materials, Inc.

发明人： Roman Gouk ,  Jean Delmas ,  Steven Verhaverbeke ,  Chintan Buch

IPC分类号： G03F7/00 ,  H01L21/027 ,  H01L21/768

摘要： An imprint lithography stamp includes a stamp body having a patterned surface and formed from a fluorinated ethylene propylene copolymer. The imprint lithography stamp further includes a backing plate with a plurality of through-holes with portions of the stamp body extending into the through-holes to adhere the stamp body to the backing plate. The patterned surface of the stamp body has a plurality of protrusions extending from the stamp body, which are used to form high aspect ratio features at high processing temperatures. A mold design for forming the imprint lithography stamp and an injection molding process for forming the imprint lithography stamp are also provided.

公开(公告)号：US11694912B2

公开(公告)日：2023-07-04

申请号：US17329948

申请日：2021-05-25

申请人： Applied Materials, Inc.

发明人： Jean Delmas ,  Steven Verhaverbeke ,  Kurtis Leschkies

IPC分类号： H01L21/67 ,  F27B9/36 ,  H01L21/677 ,  H01L21/324

CPC分类号： H01L21/67109 ,  F27B9/36 ,  H01L21/324 ,  H01L21/67017 ,  H01L21/6719 ,  H01L21/67248 ,  H01L21/67754 ,  H01L21/67748

摘要： Embodiments of the disclosure relate to an apparatus and method for annealing one or more semiconductor substrates. In one embodiment, a processing chamber is disclosed. The processing chamber includes a chamber body enclosing an internal volume, a substrate support disposed in the internal volume and configured to support a substrate during processing, a gas panel configured to provide a processing fluid into the internal volume, and a temperature-controlled fluid circuit configured to maintain the processing fluid at a temperature above a condensation point of the processing fluid. The temperature-controlled fluid circuit includes a gas conduit fluidly coupled to a port on the chamber body at a first end and to the gas panel at a second end.

公开(公告)号：US11133174B2

公开(公告)日：2021-09-28

申请号：US16352631

申请日：2019-03-13

申请人： Applied Materials, Inc.

发明人： Roman Gouk ,  Han-Wen Chen ,  Steven Verhaverbeke ,  Jean Delmas

IPC分类号： H01L21/02 ,  H01L21/67

摘要： Embodiments described herein generally relate to a processing chamber having a reduced volume for performing supercritical drying processes or other phase transition processes. The chamber includes a substrate support moveably disposed on a first track and a door moveably disposed on a second track. The substrate support and door may be configured to move independently of one another and the chamber may be configured to minimize vertical movement of the substrate within the chamber.

公开(公告)号：US11018032B2

公开(公告)日：2021-05-25

申请号：US16378140

申请日：2019-04-08

申请人： Applied Materials, Inc.

发明人： Jean Delmas ,  Steven Verhaverbeke ,  Kurtis Leschkies

IPC分类号： H01L21/67 ,  H01L21/677 ,  F27B9/36 ,  H01L21/324

摘要： Embodiments of the disclosure relate to an apparatus and method for annealing one or more semiconductor substrates. In one embodiment, a processing chamber is disclosed. The processing chamber includes a chamber body enclosing an internal volume, a substrate support disposed in the internal volume and configured to support a substrate during processing, a gas panel configured to provide a processing fluid into the internal volume, and a temperature-controlled fluid circuit configured to maintain the processing fluid at a temperature above a condensation point of the processing fluid. The temperature-controlled fluid circuit includes a gas conduit fluidly coupled to a port on the chamber body at a first end and to the gas panel at a second end.

公开(公告)号：US12087679B2

公开(公告)日：2024-09-10

申请号：US16886704

申请日：2020-05-28

申请人： Applied Materials, Inc.

发明人： Han-Wen Chen ,  Steven Verhaverbeke ,  Giback Park ,  Kyuil Cho ,  Kurtis Leschkies ,  Roman Gouk ,  Chintan Buch ,  Vincent Dicaprio ,  Bernhard Stonas ,  Jean Delmas

IPC分类号： H01L23/498 ,  H01L21/48 ,  H01L23/14

CPC分类号： H01L23/49838 ,  H01L21/486 ,  H01L23/147 ,  H01L23/49827 ,  H01L23/49866

摘要： The present disclosure relates to semiconductor core assemblies and methods of forming the same. The semiconductor core assemblies described herein may be utilized to form semiconductor package assemblies, PCB assemblies, PCB spacer assemblies, chip carrier assemblies, intermediate carrier assemblies (e.g., for graphics cards), and the like. In one embodiment, a silicon substrate core is structured by direct laser patterning. One or more conductive interconnections are formed in the substrate core and one or more redistribution layers are formed on surfaces thereof. The silicon substrate core may thereafter be utilized as a core structure for a semiconductor package, PCB, PCB spacer, chip carrier, intermediate carrier, or the like.

公开(公告)号：US11881447B2

公开(公告)日：2024-01-23

申请号：US17227867

申请日：2021-04-12

申请人： Applied Materials, Inc.

发明人： Han-Wen Chen ,  Steven Verhaverbeke ,  Giback Park ,  Kyuil Cho ,  Kurtis Leschkies ,  Roman Gouk ,  Chintan Buch ,  Vincent Dicaprio ,  Bernhard Stonas ,  Jean Delmas

IPC分类号： H01L23/538 ,  H01L23/367 ,  H01L23/498 ,  H01L21/48 ,  H01L23/14

CPC分类号： H01L23/49838 ,  H01L21/486 ,  H01L23/147 ,  H01L23/49827 ,  H01L23/49866

摘要： The present disclosure relates to semiconductor core assemblies and methods of forming the same. The semiconductor core assemblies described herein may be utilized to form semiconductor package assemblies, PCB assemblies, PCB spacer assemblies, chip carrier assemblies, intermediate carrier assemblies (e.g., for graphics cards), and the like. In one embodiment, a silicon substrate core is structured by direct laser patterning. One or more conductive interconnections are formed in the substrate core and one or more redistribution layers are formed on surfaces thereof. The silicon substrate core may thereafter be utilized as a core structure for a semiconductor package, PCB, PCB spacer, chip carrier, intermediate carrier, or the like.

公开(公告)号：US11610773B2

公开(公告)日：2023-03-21

申请号：US16830420

申请日：2020-03-26

申请人： Applied Materials, Inc.

发明人： Jean Delmas

IPC分类号： B08B3/02 ,  H01L21/02 ,  H01L21/67 ,  F16T1/38 ,  F22B29/08

摘要： Embodiments described herein relate to a high pressure processing system with a condenser and methods for utilizing the same. The processing system includes a process chamber, a boiler, a condenser, and one or more heat exchangers. The boiler generates a fluid, such as a vapor or supercritical fluid, and delivers the fluid to the process chamber where a substrate is processed. After processing the substrate, the system is depressurized and the fluid is delivered to the condenser where the fluid is condensed.