Invention Grant
- Patent Title: Semiconductor memory device including artificial drain select gate and method for driving same
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Application No.: US16128103Application Date: 2018-09-11
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Publication No.: US11018150B2Publication Date: 2021-05-25
- Inventor: Kotaro Fujii , Yasuhiro Uchiyama , Masaru Kito
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Minato-ku
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPJP2018-004761 20180116
- Main IPC: H01L27/1157
- IPC: H01L27/1157 ; H01L27/11582 ; H01L27/11565
Abstract:
A semiconductor memory device includes a first electrode film, a second electrode film separated from the first electrode film in a first direction, a third electrode film separated from the second electrode film in the first direction, a fourth electrode film separated from the third electrode film in the first direction, and a first and a second semiconductor members extending in the first direction. The second electrode film includes a first conductive portion, an insulating portion, and a second conductive portion arranged along a second direction. The first semiconductor member pierces the first, third and fourth electrode films and the insulating portion of the second electrode film. The second semiconductor member pierces the first, third and fourth electrode films, and the first conductive portion or the second conductive portion of the second electrode film.
Public/Granted literature
- US20190221576A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR DRIVING SAME Public/Granted day:2019-07-18
Information query
IPC分类:
