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公开(公告)号：US10937803B2
公开(公告)日：2021-03-02
申请号：US16530741
申请日：2019-08-02
发明人： Takayuki Kashima , Kohei Nyui , Kotaro Fujii , Hiroyuki Yamasaki
IPC分类号： H01L27/1157 , H01L27/11582 , G11C5/06 , H01L27/11556 , H01L27/11524
摘要： According to one embodiment, a semiconductor storage device includes a stacked body, a first semiconductor layer extending in the stacked body, a first charge storage layer disposed between the plurality of first conductor layers and the first semiconductor layer, a second conductor layer disposed above the stacked body, a second semiconductor layer extending through the second conductor layer, a third conductor layer disposed between the second semiconductor layer and the second conductor layer, a first insulator layer disposed above the third conductor layer, and a second insulator layer including a first portion disposed between the second semiconductor layer and the third conductor layer and a second portion disposed between the second semiconductor layer and the first insulator layer. A diameter of the second insulator layer is larger in the second portion than in the first portion.
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公开(公告)号：US20200343264A1
公开(公告)日：2020-10-29
申请号：US16928113
申请日：2020-07-14
发明人： Jun Fujiki , Shinya Arai , Kotaro Fujii
IPC分类号： H01L27/11582 , H01L27/1157 , H01L21/768 , H01L27/07 , H01L27/11573
摘要： A semiconductor memory device includes a semiconductor substrate including a diode formed in an upper layer portion of the semiconductor substrate, a first insulating film provided above the semiconductor substrate, a first conductive film provided above the first insulating film and coupled to the diode, a stacked body provided above the first conductive film, an insulator and an electrode film being stacked alternately in the stacked body, a semiconductor member piercing the stacked body and being connected to the first conductive film, and a charge storage member provided between the electrode film and the semiconductor member.
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公开(公告)号：US20210280603A1
公开(公告)日：2021-09-09
申请号：US17328030
申请日：2021-05-24
发明人： Jun Fujiki , Shinya Arai , Kotaro Fujii
IPC分类号： H01L27/11582 , H01L27/1157 , H01L21/768 , H01L27/07 , H01L27/11573
摘要： A semiconductor memory device includes a semiconductor substrate including a diode formed in an upper layer portion of the semiconductor substrate, a first insulating film provided above the semiconductor substrate, a first conductive film provided above the first insulating film and coupled to the diode, a stacked body provided above the first conductive film, an insulator and an electrode film being stacked alternately in the stacked body, a semiconductor member piercing the stacked body and being connected to the first conductive film, and a charge storage member provided between the electrode film and the semiconductor member.
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公开(公告)号：US11088162B2
公开(公告)日：2021-08-10
申请号：US16284128
申请日：2019-02-25
发明人： Kotaro Fujii , Satoshi Nagashima , Yumi Nakajima
IPC分类号： H01L29/76 , H01L27/11582 , H01L27/11556 , H01L21/8234 , G11C16/04 , H01L27/1157 , H01L27/11524 , H01L27/11565 , G11C16/26 , G11C16/08 , H01L27/11519
摘要： According to one embodiment, a semiconductor memory device includes: a first insulating layer provided between first and second interconnection layers; a first semiconductor layer provided between the first interconnection layer and the first insulating layer; a second semiconductor layer provided between the second interconnection layer and the first insulating layer; a first charge storage layer provided between the first interconnection layer and the first semiconductor layer; a second charge storage layer provided between the second interconnection layer and the second semiconductor layer; and a second insulating layer provided between the first interconnection layer and the second interconnection layer, between the first semiconductor layer and the second semiconductor layer, and between the first charge storage layer and the second charge storage layer.
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公开(公告)号：US10923490B2
公开(公告)日：2021-02-16
申请号：US16738941
申请日：2020-01-09
发明人： Kotaro Fujii , Jun Fujiki , Shinya Arai
IPC分类号： H01L27/11565 , H01L27/1157 , H01L27/11582 , H01L27/11575 , H01L27/11573
摘要： A semiconductor memory device includes a semiconductor substrate, a first insulating film provided above the semiconductor substrate, a first conductive film provided above the first insulating film, a plurality of first electrode films provided above the first conductive film and stacked to be separated from each other, a semiconductor member extending in a stacking direction of the plurality of first electrode films, and a charge storage member provided between the semiconductor member and one of the plurality of first electrode films. The first conductive film includes a main portion disposed at least below the plurality of first electrode films, and a fine line portion extending from the main portion toward an end surface side of the semiconductor substrate. A width of the fine line portion is narrower than a width of the main portion.
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公开(公告)号：US10566339B2
公开(公告)日：2020-02-18
申请号：US15691931
申请日：2017-08-31
发明人： Kotaro Fujii , Jun Fujiki , Shinya Arai
IPC分类号： H01L27/11565 , H01L27/1157 , H01L27/11582
摘要： A semiconductor memory device includes a semiconductor substrate, a first insulating film provided above the semiconductor substrate, a first conductive film provided above the first insulating film, a plurality of first electrode films provided above the first conductive film and stacked to be separated from each other, a semiconductor member extending in a stacking direction of the plurality of first electrode films, and a charge storage member provided between the semiconductor member and one of the plurality of first electrode films. The first conductive film includes a main portion disposed at least below the plurality of first electrode films, and a fine line portion extending from the main portion toward an end surface side of the semiconductor substrate. A width of the fine line portion is narrower than a width of the main portion.
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7.发明授权公开(公告)号：US09761606B1
公开(公告)日：2017-09-12
申请号：US15266850
申请日：2016-09-15
发明人： Takashi Ishida , Jun Fujiki , Shinya Arai , Fumitaka Arai , Hideaki Aochi , Kotaro Fujii
IPC分类号： H01L27/115 , H01L27/11582 , H01L23/528 , H01L23/522 , H01L27/11556 , H01L27/11578
CPC分类号： H01L27/11582 , H01L23/5226 , H01L23/5283 , H01L27/1157 , H01L27/11573 , H01L27/11578
摘要： According to one embodiment, a semiconductor device includes a first interconnection, a first semiconductor region, a stacked body, a columnar portion, first insulators, and arrays. The first interconnection is provided on a substrate via a first insulating film interposed. The first semiconductor region is provided on the first interconnection via a second insulating film. The stacked body is provided on the first semiconductor region. The columnar portion is provided in the stacked body. The first insulators are provided in the stacked body. The first insulators extend in the stacking direction and a first direction crossing the stacking direction. The arrays are provided in the first semiconductor region. The arrays each include second semiconductor regions. The second semiconductor regions are separated from each other. The second semiconductor regions are provided under the first insulators. The second semiconductor regions are electrically connected to the first interconnection.
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公开(公告)号：US11049878B2
公开(公告)日：2021-06-29
申请号：US16928113
申请日：2020-07-14
发明人： Jun Fujiki , Shinya Arai , Kotaro Fujii
IPC分类号： H01L27/11582 , H01L27/1157 , H01L27/11573 , H01L21/768 , H01L27/07
摘要： A semiconductor memory device includes a semiconductor substrate including a diode formed in an upper layer portion of the semiconductor substrate, a first insulating film provided above the semiconductor substrate, a first conductive film provided above the first insulating film and coupled to the diode, a stacked body provided above the first conductive film, an insulator and an electrode film being stacked alternately in the stacked body, a semiconductor member piercing the stacked body and being connected to the first conductive film, and a charge storage member provided between the electrode film and the semiconductor member.
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9.发明授权公开(公告)号：US11018150B2
公开(公告)日：2021-05-25
申请号：US16128103
申请日：2018-09-11
发明人： Kotaro Fujii , Yasuhiro Uchiyama , Masaru Kito
IPC分类号： H01L27/1157 , H01L27/11582 , H01L27/11565
摘要： A semiconductor memory device includes a first electrode film, a second electrode film separated from the first electrode film in a first direction, a third electrode film separated from the second electrode film in the first direction, a fourth electrode film separated from the third electrode film in the first direction, and a first and a second semiconductor members extending in the first direction. The second electrode film includes a first conductive portion, an insulating portion, and a second conductive portion arranged along a second direction. The first semiconductor member pierces the first, third and fourth electrode films and the insulating portion of the second electrode film. The second semiconductor member pierces the first, third and fourth electrode films, and the first conductive portion or the second conductive portion of the second electrode film.
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公开(公告)号：US10756104B2
公开(公告)日：2020-08-25
申请号：US16129082
申请日：2018-09-12
发明人： Jun Fujiki , Shinya Arai , Kotaro Fujii
IPC分类号： H01L27/11582 , H01L27/1157 , H01L27/11573 , H01L21/768 , H01L27/07
摘要： A semiconductor memory device includes a semiconductor substrate including a diode formed in an upper layer portion of the semiconductor substrate, a first insulating film provided above the semiconductor substrate, a first conductive film provided above the first insulating film and coupled to the diode, a stacked body provided above the first conductive film, an insulator and an electrode film being stacked alternately in the stacked body, a semiconductor member piercing the stacked body and being connected to the first conductive film, and a charge storage member provided between the electrode film and the semiconductor member.
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