Invention Grant
- Patent Title: Pixel structure
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Application No.: US16171334Application Date: 2018-10-25
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Publication No.: US11018182B2Publication Date: 2021-05-25
- Inventor: Yi-Jyun Chen , Li-Cheng Yang , Yu-Chun Lee , Shiou-Yi Kuo , Chih-Hao Lin
- Applicant: Lextar Electronics Corporation
- Applicant Address: TW Hsinchu
- Assignee: Lextar Electronics Corporation
- Current Assignee: Lextar Electronics Corporation
- Current Assignee Address: TW Hsinchu
- Agency: CKC & Partners Co., LLC
- Priority: CN201711020134.X 20171027
- Main IPC: H01L27/15
- IPC: H01L27/15 ; H01L33/50 ; H01L25/075 ; H01L33/08 ; H01L33/52 ; H01L33/38 ; H01L33/58 ; H01L33/46

Abstract:
A pixel structure includes a light emitting diode chip and a light blocking structure. The light emitting diode chip includes a P-type semiconductor layer, an active layer, an N-type semiconductor layer, a first electrode, and K second electrodes. The active layer is located on the P-type semiconductor layer. The N-type semiconductor layer is located on the active layer. The N-type semiconductor layer has a first top surface that is distant from the active layer. The first electrode is electrically connected to the P-type semiconductor layer. The light blocking structure is located in the light emitting diode chip and defines K sub-pixel regions. The active layer and the N-type semiconductor layer are divided into K sub-portions respectively corresponding to the K sub-pixel regions by the light blocking structure. The K sub-pixel regions share the P-type semiconductor layer.
Public/Granted literature
- US20190131342A1 PIXEL STRUCTURE Public/Granted day:2019-05-02
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