Invention Grant
- Patent Title: Light emitting element having excellent contact between semiconductor layer and electrode
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Application No.: US16444528Application Date: 2019-06-18
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Publication No.: US11018279B2Publication Date: 2021-05-25
- Inventor: Yong Gyeong Lee , Min Sung Kim , Su Ik Park , Youn Joon Sung , Kwang Yong Choi
- Applicant: LG INNOTEK CO., LTD.
- Applicant Address: KR Seoul
- Assignee: LG INNOTEK CO., LTD.
- Current Assignee: LG INNOTEK CO., LTD.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR10-2015-0118801 20150824
- Main IPC: H01L33/20
- IPC: H01L33/20 ; H01L33/38 ; H01L33/40 ; H01L33/08

Abstract:
A light emitting device can include a sapphire substrate; a first conductivity type semiconductor layer disposed on the sapphire substrate; an active layer disposed on the first conductivity type semiconductor layer; a plurality of p-type conductors disposed on the active layer, and separated from each other; a first pad disposed on the first conductivity type semiconductor layer; and a second pad disposed on the plurality of p-type conductors, in which the plurality of p-type conductors are arranged in a first direction, the second pad is spaced apart from the first pad in a second direction, the second direction is perpendicular to the first direction, each of the plurality of p-type conductors has a first width in the first direction and a second width in the second direction, the first width being less than the second width, the plurality of p-type conductors are evenly spaced apart by a first distance in the first direction, and the first distance being less than the first width of each of the plurality of p-type conductors in the first direction.
Public/Granted literature
- US20190305184A1 LIGHT EMITTING ELEMENT Public/Granted day:2019-10-03
Information query
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