A giant perpendicular magnetic anisotropy (PMA) material comprises a III-V nitride substrate, and a layer of nitrogen disposed upon a surface of the III-V nitride substrate. The layer of nitrogen forms an N-terminated surface. The PMA material further comprises an iron film disposed upon the N-terminated surface. The III-V nitride substrate may be gallium nitride (GaN). A memory device using the PMA material may further comprise an input/output interface configured to communicate an address signal, a read/write signal and a data signal. The memory device may further comprise a controller configured to coordinate reading data from and writing data to the memory element.