A multispectral image sensor includes a semiconductor layer and a number of pixels formed inside and on top of the semiconductor layer. The pixels include a first pixel of a first type formed inside and on top of a first portion of the semiconductor layer and a second pixel of a second type formed inside and on top of a second portion of the semiconductor layer. The first pixel has a first thickness that defines a vertical cavity resonating at a first wavelength and the second pixel has a second thickness different from the first thickness. The second thickness defines a vertical cavity resonating at a second wavelength different than the first wavelength.