- 专利标题: RRAM structure and method of fabricating the same
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申请号: US16741698申请日: 2020-01-13
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公开(公告)号: US11049904B1公开(公告)日: 2021-06-29
- 发明人: Chin-Chun Huang , Yun-Pin Teng , Jinjian Ouyang , Wen Yi Tan
- 申请人: United Semiconductor (Xiamen) Co., Ltd.
- 申请人地址: CN Fujian
- 专利权人: United Semiconductor (Xiamen) Co., Ltd.
- 当前专利权人: United Semiconductor (Xiamen) Co., Ltd.
- 当前专利权人地址: CN Fujian
- 代理商 Winston Hsu
- 优先权: CN201911390437.X 20191230
- 主分类号: H01L27/24
- IPC分类号: H01L27/24 ; H01L45/00 ; H01L29/66 ; H01L29/45 ; H01L29/08
摘要:
An RRAM structure includes a substrate. An RRAM is embedded in the substrate. The RRAM includes a bottom electrode, a metal oxide layer and a top electrode. A first doped region is embedded in the substrate and surrounds the bottom electrode. A transistor is disposed on the substrate and at one side of the RRAM. The transistor includes a gate structure on the substrate. A source is disposed in the substrate and at one side of the gate structure. A drain is disposed in the substrate and at another side of the gate structure. The first doped region contacts the drain.
公开/授权文献
- US20210202578A1 RRAM STRUCTURE AND METHOD OF FABRICATING THE SAME 公开/授权日:2021-07-01
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