- 专利标题: Method for removing boron
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申请号: US15854375申请日: 2017-12-26
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公开(公告)号: US11052348B2公开(公告)日: 2021-07-06
- 发明人: Ta-Ching Hsiao , Chu-Pi Jeng , Kuo-Lun Huang , Mu-Hsi Sung , Keng-Yang Chen , Li-Duan Tsai
- 申请人: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- 申请人地址: TW Hsinchu
- 专利权人: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- 当前专利权人: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- 当前专利权人地址: TW Hsinchu
- 代理机构: Birch, Stewart, Kolasch & Birch, LLP
- 优先权: TW106142908 20171207
- 主分类号: B01D53/46
- IPC分类号: B01D53/46 ; C01B32/984 ; C01B35/02 ; C01B32/97 ; C01B32/20 ; B01J3/00 ; B01J8/02 ; B01J8/00
摘要:
A method for removing boron is provided, which includes (a) mixing a carbon source material and a silicon source material in a chamber to form a solid state mixture, (b) heating the solid state mixture to a temperature of 1000° C. to 1600° C., and adjusting the pressure of the chamber to 1 torr to 100 torr. The method also includes (c) conducting a gas mixture of a first carrier gas and water vapor into the chamber to remove boron from the solid state mixture, and (d) conducting a second carrier gas into the chamber.
公开/授权文献
- US20190176085A1 METHOD AND APPARATUS FOR REMOVING BORON 公开/授权日:2019-06-13