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公开(公告)号：US20210257617A1
公开(公告)日：2021-08-19
申请号：US17252431
申请日：2019-10-18
申请人： LG CHEM, LTD.
发明人： Il Geun OH , Yong Ju LEE , Su Min LEE
IPC分类号： H01M4/587 , C01B32/984
摘要： According to an exemplary embodiment of the present disclosure, a negative electrode active material includes metal-silicon-carbon based particles including a MaSibC matrix, wherein M in the MaSibC matrix is one or more selected from the group consisting of Li, Mg, Na, Ca, and Al, 0.3≤a≤1, and 1≤b≤2. Since at the time of charging and discharging a battery, formation of an irreversible phase may be minimized by the MaSibC matrix, initial efficiency of the battery may be improved, and electrical conductivity, physical strength, and chemical stability may be improved, such that capacity and lifecycle characteristics of the battery may be improved.
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公开(公告)号：US20190176085A1
公开(公告)日：2019-06-13
申请号：US15854375
申请日：2017-12-26
发明人： Ta-Ching HSIAO , Chu-Pi JENG , Kuo-Lun HUANG , Mu-Hsi SUNG , Keng-Yang CHEN , Li-Duan TSAI
IPC分类号： B01D53/46 , C01B35/02 , C01B32/984
摘要： A method for removing boron is provided, which includes (a) mixing a carbon source material and a silicon source material in a chamber to form a solid state mixture, (b) heating the solid state mixture to a temperature of 1000° C. to 1600° C., and adjusting the pressure of the chamber to 1 torr to 100 torr. The method also includes (c) conducting a gas mixture of a first carrier gas and water vapor into the chamber to remove boron from the solid state mixture, and (d) conducting a second carrier gas into the chamber.
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公开(公告)号：US20210275965A1
公开(公告)日：2021-09-09
申请号：US17327131
申请日：2021-05-21
发明人： Ta-Ching HSIAO , Chu-Pi JENG , Kuo-Lun HUANG , Mu-Hsi SUNG , Keng-Yang CHEN , Li-Duan TSAI
摘要： A method for removing boron is provided, which includes (a) mixing a carbon source material and a silicon source material in a chamber to form a solid state mixture, (b) heating the solid state mixture to a temperature of 1000° C. to 1600° C., and adjusting the pressure of the chamber to 1 torr to 100 torr. The method also includes (c) conducting a gas mixture of a first carrier gas and water vapor into the chamber to remove boron from the solid state mixture, and (d) conducting a second carrier gas into the chamber.
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公开(公告)号：US11052348B2
公开(公告)日：2021-07-06
申请号：US15854375
申请日：2017-12-26
发明人： Ta-Ching Hsiao , Chu-Pi Jeng , Kuo-Lun Huang , Mu-Hsi Sung , Keng-Yang Chen , Li-Duan Tsai
摘要： A method for removing boron is provided, which includes (a) mixing a carbon source material and a silicon source material in a chamber to form a solid state mixture, (b) heating the solid state mixture to a temperature of 1000° C. to 1600° C., and adjusting the pressure of the chamber to 1 torr to 100 torr. The method also includes (c) conducting a gas mixture of a first carrier gas and water vapor into the chamber to remove boron from the solid state mixture, and (d) conducting a second carrier gas into the chamber.
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公开(公告)号：US20200002177A1
公开(公告)日：2020-01-02
申请号：US16437725
申请日：2019-06-11
申请人： Lehigh University
发明人： John T. Fox , Kun Yang
IPC分类号： C01B32/984 , B01J27/053 , B01D39/20 , B01D46/24 , C04B35/573 , C04B35/622 , C04B35/65
摘要： A method of making SiC nanowires comprising: (a) mixing silicon powder with a carbon-containing biopolymer and a catalyst at room temperature to form a mixture; and (b) heating said mixture to a pyrolyzing temperature sufficient to react said biopolymer and said silicon power to form SiC nanowires.
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公开(公告)号：US11541351B2
公开(公告)日：2023-01-03
申请号：US17327131
申请日：2021-05-21
发明人： Ta-Ching Hsiao , Chu-Pi Jeng , Kuo-Lun Huang , Mu-Hsi Sung , Keng-Yang Chen , Li-Duan Tsai
摘要： A method for removing boron is provided, which includes (a) mixing a carbon source material and a silicon source material in a chamber to form a solid state mixture, (b) heating the solid state mixture to a temperature of 1000° C. to 1600° C., and adjusting the pressure of the chamber to 1 torr to 100 torr. The method also includes (c) conducting a gas mixture of a first carrier gas and water vapor into the chamber to remove boron from the solid state mixture, and (d) conducting a second carrier gas into the chamber.
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公开(公告)号：US20220315430A1
公开(公告)日：2022-10-06
申请号：US17843934
申请日：2022-06-17
申请人： BEIJING UNIVERSITY OF TECHNOLOGY , Guangzhou Institute of Energy Conversion, Chinese Academy of Sciences
发明人： Yufeng WU , Haoran Yuan
IPC分类号： C01B32/984 , C22B7/00
摘要： The invention discloses a method for producing silicon carbide from waste circuit board cracking residue, belongs to the field of comprehensive utilization of waste circuit board cracking products, and particularly relates to a method for high-valued utilization of non-metal components in waste circuit board cracking residue. The method mainly comprises the following steps: rolling and crushing, vibration sorting, ultrafine pulverization and electro-separation, quantitative batching, microwave sintering and discharging and grading. Compared with the prior art, rolling crushing is adopted to replace traditional shearing crushing, microwave sintering is adopted to replace a traditional Acheson smelting furnace, the effects of being easy to operate, saving energy and reducing consumption are achieved, the production efficiency is greatly improved, and the production cost is reduced. A brand-new method for obtaining high-purity silicon carbide by partially replacing anthracite and quartz sand with cracked coke and silicon dioxide in waste circuit board light plates or epoxy resin cracking residues is adopted, and high-value utilization of waste resources is achieved. The method has the characteristics of simple and feasible process, low manufacturing cost and wide adaptability, and is beneficial to improving the economic benefit and social benefit of enterprise production.
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8.发明申请公开(公告)号：US20210122641A1
公开(公告)日：2021-04-29
申请号：US15929749
申请日：2020-05-20
发明人： Ji-Guang Zhang , Ran Yi , Qiuyan Li , Sujong Chae , Xiaolin Li , Yaobin Xu , Chongmin Wang
IPC分类号： C01B33/02 , H01M10/0525 , H01M4/583 , H01M10/44 , C01B32/984 , H01M10/0568 , H01M10/0569
摘要： Stabilized porous silicon particles are disclosed. The particles include a porous silicon particle comprising a plurality of interconnected silicon nanoparticles and (i) a heterogeneous layer comprising a discontinuous SiC coating that is discontinuous across a portion of pore surfaces and across a portion of an outer surface of the porous silicon particle, and a continuous carbon coating that covers outer surfaces of the discontinuous SiC coating, and remaining portions of the pore surfaces and the outer surface of the porous silicon particle, or (ii) a continuous carbon coating on surfaces of the porous silicon particle, including the outer surface and pore surfaces. Methods of making the stabilized porous silicon particles also are disclosed.
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公开(公告)号：US20220402764A1
公开(公告)日：2022-12-22
申请号：US17777044
申请日：2020-11-13
申请人： SUSTEON INC.
IPC分类号： C01B32/984
摘要： A process for production of silicon carbide and hydrogen is described, involving reacting hydrocarbon gas in the presence of silicon particles to form particulate silicon carbide and hydrogen, wherein the silicon particles, in addition to being reactants, also act as a catalyst for the reaction. Apparatus for carrying out such process is also described. The disclosed process and apparatus enable production of particulate silicon carbide at high purity, e.g., 5N (99.999%) and higher purity, as well as high purity hydrogen.
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公开(公告)号：US11165056B2
公开(公告)日：2021-11-02
申请号：US15527463
申请日：2015-11-09
IPC分类号： H01M4/38 , H01M4/36 , H01M4/62 , H01M10/052 , C04B35/636 , C04B35/624 , C04B35/622 , C01B32/984 , C04B35/628 , H01M10/0525
摘要： The present invention relates to a method for producing an electrode material for a battery electrode, in particular for a lithium-ion battery, wherein said electrode material comprises nanostructured silicon carbide, comprising the steps of: a) providing a mixture including a silicon source, a carbon source and a dopant, wherein at least the silicon source and the carbon source are present in common in particles of a solid granulate; b) treating the mixture provided in step a) at a temperature in the range from ≥1400° C. to ≤2000° C., in particular in a range from ≥1650° C. to ≤1850° C., wherein step b) is carried out in a reactor that has a depositing surface the temperature of which relative to at least one other inner reactor surface is reduced. In summary, a method described above enables to combine a simple and cost-efficient production with a high cycle stability.
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