A memory cell comprises, in the following order, channel material, a charge-passage structure, programmable material, a charge-blocking region, and a control gate. The charge-passage structure comprises a first material closest to the channel material, a third material furthest from the channel material, and a second material between the first material and the third material. The first and third materials comprise SiO2. The second material has a thickness of 0.4 nanometer to 5.0 nanometers and comprises SiOx, where “x” is less than 2.0 and greater than 0. Other embodiments are disclosed.