Methods pattern a sacrificial material on an etch mask into mandrels using optical mask lithography, form a conformal material and a fill material on the mandrels, and planarize the fill material to the level of the conformal material. Such methods pattern the fill material into first mask features using extreme ultraviolet (EUV) lithography. These methods partially remove the conformal material to leave the conformal material on the sidewalls of the mandrels as second mask features. Spaces between the first mask features and the second mask features define an etching pattern. The spacing distance of the mandrels is larger than the spacing distance of the second mask features. Such methods transfer the etching pattern into the etch mask material, and subsequently transfer the etching pattern into an underlying layer. Openings in the underlying layer are filled with a conductor to form wiring in the etching pattern.