Invention Grant
- Patent Title: Method of fabricating an integrated circuit with non-printable dummy features
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Application No.: US16517740Application Date: 2019-07-22
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Publication No.: US11061317B2Publication Date: 2021-07-13
- Inventor: Jyuh-Fuh Lin , Cheng-Hung Chen , Pei-Yi Liu , Wen-Chuan Wang , Shy-Jay Lin , Burn Jeng Lin
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F1/36
- IPC: G03F1/36 ; G06F30/39 ; G06F30/392 ; H01L27/02 ; H01L21/762 ; G06F119/18

Abstract:
The present disclosure provides one embodiment of an IC method that includes receiving an IC design layout, which has a plurality of main features and a plurality of space blocks. The IC method also includes calculating an optimized block dummy density ratio r0 to optimize a uniformity of pattern density (UPD), determining a target block dummy density ratio R, determining size, pitch and type of a non-printable dummy feature, generating a pattern for dummy features and adding the dummy features in the IC design layout.
Public/Granted literature
- US20190339610A1 Method of Fabricating an Integrated Circuit with Non-Printable Dummy Features Public/Granted day:2019-11-07
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