Invention Grant
- Patent Title: Stacking structure having material layer on graphene layer and method of forming material layer on graphene layer
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Application No.: US14588734Application Date: 2015-01-02
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Publication No.: US11062818B2Publication Date: 2021-07-13
- Inventor: Seong-jun Jeong , Seong-jun Park , Hyeon-jin Shin , Yea-hyun Gu , Hyoung-sub Kim , Jae-hyun Yang
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-Si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2014-0000931 20140103
- Main IPC: B32B9/00
- IPC: B32B9/00 ; H01B1/04 ; C23C16/02 ; C23C16/455 ; H01L29/51 ; H01L29/778 ; C23C16/40 ; H01L29/16
Abstract:
Example embodiments relate to a stacking structure having a material layer formed on a graphene layer, and a method of forming the material layer on the graphene layer. In the stacking structure, when the material layer is formed on the graphene layer by using an ALD method, an intermediate layer as a seed layer may be formed on the graphene layer by using a linear type precursor.
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