Invention Grant
- Patent Title: Semiconductor device and method for fabricating thereof
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Application No.: US16385188Application Date: 2019-04-16
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Publication No.: US11075160B2Publication Date: 2021-07-27
- Inventor: Doo-Hwan Park , Seong Ho Park , Kyoung Pil Park , Tae Yong Bae , Eun-Chul Seo
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2018-0077024 20180703
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L23/528 ; H01L21/768

Abstract:
A semiconductor device is provided. The semiconductor device includes a first wiring and a second wiring disposed at a first metal level, a third wiring and a fourth wiring disposed at a second metal level different from the first metal level, a first via which directly connects the first wiring and the third wiring, a fifth wiring disposed at a third metal level between the first metal level and the second metal level and connected to the second wiring, and a second via which directly connects the fourth wiring and the fifth wiring.
Public/Granted literature
- US20200013715A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THEREOF Public/Granted day:2020-01-09
Information query
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