公开(公告)号：US11075160B2

公开(公告)日：2021-07-27

申请号：US16385188

申请日：2019-04-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doo-Hwan Park ,  Seong Ho Park ,  Kyoung Pil Park ,  Tae Yong Bae ,  Eun-Chul Seo

IPC: H01L23/522 ,  H01L23/528 ,  H01L21/768

Abstract: A semiconductor device is provided. The semiconductor device includes a first wiring and a second wiring disposed at a first metal level, a third wiring and a fourth wiring disposed at a second metal level different from the first metal level, a first via which directly connects the first wiring and the third wiring, a fifth wiring disposed at a third metal level between the first metal level and the second metal level and connected to the second wiring, and a second via which directly connects the fourth wiring and the fifth wiring.

公开(公告)号：US20200013715A1

公开(公告)日：2020-01-09

申请号：US16385188

申请日：2019-04-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doo-Hwan Park ,  Seong Ho Park ,  Kyoung Pil Park ,  Tae Yong Bae ,  Eun-Chul Seo

IPC: H01L23/522 ,  H01L23/528 ,  H01L21/768

Abstract: A semiconductor device is provided. The semiconductor device includes a first wiring and a second wiring disposed at a first metal level, a third wiring and a fourth wiring disposed at a second metal level different from the first metal level, a first via which directly connects the first wiring and the third wiring, a fifth wiring disposed at a third metal level between the first metal level and the second metal level and connected to the second wiring, and a second via which directly connects the fourth wiring and the fifth wiring.