An insulated gate power semiconductor device includes an (n-) doped drift layer between an emitter side and a collector side. A p doped protection pillow covers a trench bottom of a trench gate electrode. An n doped enhancement layer having a maximum enhancement layer doping concentration in an enhancement layer depth separates the base layer from the drift layer. An n doped plasma enhancement layer having a maximum plasma enhancement layer doping concentration covers an edge region between the protection pillow and the trench gate electrode. The N doping concentration decreases from the maximum enhancement layer doping concentration towards the plasma enhancement layer and the N doping concentration decreases from the maximum plasma enhancement layer doping concentration towards the enhancement layer such that the N doping concentration has a local doping concentration minimum between the enhancement layer and the plasma enhancement layer.