- 专利标题： High resistivity SOI wafers and a method of manufacturing thereof
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申请号： US16948376申请日： 2020-09-16
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公开(公告)号： US11081386B2公开(公告)日： 2021-08-03
- 发明人: Igor Peidous , Srikanth Kommu , Gang Wang , Shawn George Thomas
- 申请人： GlobalWafers Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： GlobalWafers Co., Ltd.
- 当前专利权人： GlobalWafers Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Armstrong Teasdale LLP
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L21/02 ; H01L29/06
摘要：
A high resistivity single crystal semiconductor handle structure for use in the manufacture of SOI structure is provided. The handle structure comprises an intermediate semiconductor layer between the handle substrate and the buried oxide layer. The intermediate semiconductor layer comprises a polycrystalline, amorphous, nanocrystalline, or monocrystalline structure and comprises a material selected from the group consisting of Si1-xGex, Si1-xCx, Si1-x-yGexSny, Si1-x-y-zGexSnyCz, Ge1-xSnx, group IIIA-nitrides, semiconductor oxides, and any combination thereof.
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