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公开(公告)号：US11699615B2
公开(公告)日：2023-07-11
申请号：US17445840
申请日：2021-08-25
发明人： Igor Peidous , Lu Fei , Jeffrey L. Libbert , Andrew M. Jones , Alex Usenko , Gang Wang , Shawn George Thomas , Srikanth Kommu
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： A semiconductor on insulator multilayer structure is provided. The multilayer comprises a high resistivity single crystal semiconductor handle substrate, an optionally relaxed semiconductor layer comprising silicon, germanium, or silicon germanium, an optional polycrystalline silicon layer, a dielectric layer, and a single crystal semiconductor device layer.
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公开(公告)号：US11668006B2
公开(公告)日：2023-06-06
申请号：US17162729
申请日：2021-01-29
IPC分类号： C23C16/00 , H01L21/00 , C23C16/455 , H01J37/32
CPC分类号： C23C16/45504 , C23C16/45563 , H01J37/3244 , H01J37/32477
摘要： A liner assembly for a substrate processing system includes a first liner and a second liner. The first liner includes an annular body and an outer peripheral surface including a first fluid guide. The first fluid guide is curved about a circumferential line extending around the first liner. The second liner includes an annular body, an outer rim, an inner rim, a second fluid guide extending between the outer rim and the inner rim, and a plurality of partition walls extending outwardly from the second fluid guide. The second fluid guide is curved about the circumferential line when the first and second liners are positioned within the processing system.
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公开(公告)号：US20220165609A1
公开(公告)日：2022-05-26
申请号：US17667256
申请日：2022-02-08
IPC分类号： H01L21/762 , H01L21/306 , H01L21/84
摘要： Methods for removing an oxide film from a silicon-on-insulator structure are disclosed. The oxide may be stripped from a SOI structure before deposition of an epitaxial silicon thickening layer. The oxide film may be removed by dispensing an etching solution toward a center region of the SOI structure and dispensing an etching solution to an edge region of the structure.
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公开(公告)号：US11081386B2
公开(公告)日：2021-08-03
申请号：US16948376
申请日：2020-09-16
发明人： Igor Peidous , Srikanth Kommu , Gang Wang , Shawn George Thomas
IPC分类号： H01L21/762 , H01L21/02 , H01L29/06
摘要： A high resistivity single crystal semiconductor handle structure for use in the manufacture of SOI structure is provided. The handle structure comprises an intermediate semiconductor layer between the handle substrate and the buried oxide layer. The intermediate semiconductor layer comprises a polycrystalline, amorphous, nanocrystalline, or monocrystalline structure and comprises a material selected from the group consisting of Si1-xGex, Si1-xCx, Si1-x-yGexSny, Si1-x-y-zGexSnyCz, Ge1-xSnx, group IIIA-nitrides, semiconductor oxides, and any combination thereof.
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公开(公告)号：US20190273015A1
公开(公告)日：2019-09-05
申请号：US16409038
申请日：2019-05-10
发明人： Gang Wang , Shawn George Thomas
IPC分类号： H01L21/762 , H01L21/3065 , H01L21/02
摘要： The disclosed method is suitable for producing a SiGe-on-insulator structure. According to some embodiments of the method, a layer comprising SiGe is deposited on silicon-on-insulator substrate comprising an ultra-thin silicon top layer. In some embodiments, the layer comprising SiGe is deposited by epitaxial deposition. In some embodiments, the SiGe epitaxial layer is high quality since it is produced by engineering the strain relaxation at the Si/buried oxide interface. In some embodiments, the method accomplishes elastic strain relaxation of SiGe grown on a few monolayer thick Si layer that is weakly bonded to the underline oxide.
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公开(公告)号：US20190139818A1
公开(公告)日：2019-05-09
申请号：US16235305
申请日：2018-12-28
发明人： Igor Peidous , Lu Fei , Jeffrey L. Libbert , Andrew M. Jones , Alex Usenko , Gang Wang , Shawn George Thomas , Srikanth Kommu
IPC分类号： H01L21/762
摘要： A semiconductor on insulator multilayer structure is provided. The multilayer comprises a high resistivity single crystal semiconductor handle substrate, an optionally relaxed semiconductor layer comprising silicon, germanium, or silicon germanium, an optional polycrystalline silicon layer, a dielectric layer, and a single crystal semiconductor device layer.
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公开(公告)号：US11798835B2
公开(公告)日：2023-10-24
申请号：US17667256
申请日：2022-02-08
IPC分类号： H01L21/762 , H01L21/306 , H01L21/84 , H01L21/02
CPC分类号： H01L21/76254 , H01L21/30604 , H01L21/84 , H01L21/02052
摘要： Methods for removing an oxide film from a silicon-on-insulator structure are disclosed. The oxide may be stripped from a SOI structure before deposition of an epitaxial silicon thickening layer. The oxide film may be removed by dispensing an etching solution toward a center region of the SOI structure and dispensing an etching solution to an edge region of the structure.
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公开(公告)号：US11345996B2
公开(公告)日：2022-05-31
申请号：US16235729
申请日：2018-12-28
IPC分类号： C23C16/00 , H01L21/00 , C23C16/455 , H01J37/32
摘要： A liner assembly for a substrate processing system includes a first liner and a second liner. The first liner includes an annular body and an outer peripheral surface including a first fluid guide. The first fluid guide is curved about a circumferential line extending around the first liner. The second liner includes an annular body, an outer rim, an inner rim, a second fluid guide extending between the outer rim and the inner rim, and a plurality of partition walls extending outwardly from the second fluid guide. The second fluid guide is curved about the circumferential line when the first and second liners are positioned within the processing system.
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公开(公告)号：US10907251B2
公开(公告)日：2021-02-02
申请号：US16235671
申请日：2018-12-28
IPC分类号： C23C16/00 , C23C16/455 , H01L21/00
摘要： A liner assembly for a substrate processing system includes a first liner and a second liner. The first liner includes an annular body and an outer peripheral surface including a first fluid guide. The first fluid guide is curved about a circumferential line extending around the first liner. The second liner includes an annular body, an outer rim, an inner rim, a second fluid guide extending between the outer rim and the inner rim, and a plurality of partition walls extending outwardly from the second fluid guide. The second fluid guide is curved about the circumferential line when the first and second liners are positioned within the processing system.
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公开(公告)号：US20210005507A1
公开(公告)日：2021-01-07
申请号：US16948376
申请日：2020-09-16
发明人： Igor Peidous , Srikanth Kommu , Gang Wang , Shawn George Thomas
IPC分类号： H01L21/762
摘要： A high resistivity single crystal semiconductor handle structure for use in the manufacture of SOI structure is provided. The handle structure comprises an intermediate semiconductor layer between the handle substrate and the buried oxide layer. The intermediate semiconductor layer comprises a polycrystalline, amorphous, nanocrystalline, or monocrystalline structure and comprises a material selected from the group consisting of Si1-xGex, Si1-xCx, Si1-x-yGexSny, Si1-x-y-zGexSnyCz, Ge1-xSnx, group IIIA-nitrides, semiconductor oxides, and any combination thereof.
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