A method includes forming an interlayer dielectric (ILD) layer over a first epitaxial source/drain (S/D) feature and a second epitaxial S/D feature, where the first epitaxial S/D feature is disposed adjacent to the second epitaxial S/D feature, forming a dummy contact feature in the ILD layer over the first epitaxial S/D feature, removing a portion of the dummy contact feature and a portion of the ILD layer disposed above the second epitaxial S/D feature to form a first trench, removing a remaining portion of the dummy contact feature to form a second trench, and forming a metal S/D contact in the first and the second trenches.