Invention Grant
- Patent Title: Circuit employing MOSFETs and corresponding method
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Application No.: US16786182Application Date: 2020-02-10
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Publication No.: US11082018B2Publication Date: 2021-08-03
- Inventor: Sandor Petenyi
- Applicant: STMicroelectronics Design and Application S.R.O.
- Applicant Address: CZ Prague
- Assignee: STMicroelectronics Design and Application S.R.O.
- Current Assignee: STMicroelectronics Design and Application S.R.O.
- Current Assignee Address: CZ Prague
- Agency: Crowe & Dunlevy
- Priority: IT102019000001941 20190211
- Main IPC: H03F3/45
- IPC: H03F3/45 ; H03F1/02 ; H03F1/30

Abstract:
A MOSFET has a current conduction path between source and drain terminals. A gate terminal of the MOSFET receives an input signal to facilitate current conduction in the current conduction path as a result of a gate-to-source voltage reaching a threshold voltage. A body terminal of the MOSFET is coupled to body voltage control circuitry that is sensitive to the voltage at the gate terminal of the MOSFET. The body voltage control circuitry responds to a reduction in the voltage at the gate terminal of the MOSFET by increasing the body voltage of the MOSFET at the body terminal of the MOSFET. As a result, there is reduction in the threshold voltage. The circuit configuration is applicable to amplifier circuits, comparator circuits and current mirror circuits.
Public/Granted literature
- US20200259473A1 CIRCUIT EMPLOYING MOSFETS AND CORRESPONDING METHOD Public/Granted day:2020-08-13
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