Invention Grant
- Patent Title: Non-volatile memory with bit line controlled multi-plane mixed sub-block programming
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Application No.: US16021282Application Date: 2018-06-28
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Publication No.: US11087849B2Publication Date: 2021-08-10
- Inventor: Henry Chin , Zhenming Zhou
- Applicant: SANDISK TECHNOLOGIES LLC
- Applicant Address: US TX Addison
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Addison
- Agency: Vierra Magen Marcus LLP
- Main IPC: G11C16/24
- IPC: G11C16/24 ; G11C16/26 ; G11C16/08 ; G11C16/12 ; G11C16/34 ; G11C16/04 ; G11C8/12
Abstract:
A non-volatile memory system includes a control circuit connected to non-volatile memory cells. The control circuit is configured to simultaneously program memory cells connected to different word lines that are in different sub-blocks of different blocks in different planes of a die.
Information query
