Invention Grant
- Patent Title: Semiconductor device and method for fabricating a semiconductor device
-
Application No.: US16695866Application Date: 2019-11-26
-
Publication No.: US11088105B2Publication Date: 2021-08-10
- Inventor: Thomas Bemmerl , Chooi Mei Chong , Edward Myers , Michael Stadler
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102018130147.2 20181128
- Main IPC: H01L23/00
- IPC: H01L23/00

Abstract:
A semiconductor device includes: a carrier having a die pad and a contact; a semiconductor die having opposing first and second main sides and being attached to the die pad by a first solder joint such that the second main side faces the die pad; and a contact clip having a first contact region and a second contact region. The first contact is attached to the first main side by a second solder joint. The second contact region is attached to the contact by a third solder joint. The first contact region has a convex shape facing towards the first main side such that a distance between the first main side and the first contact region increases from a base of the convex shape towards an edge of the first contact region. The base runs along a line that is substantially perpendicular to a longitudinal axis of the contact clip.
Public/Granted literature
- US20200168575A1 Semiconductor Device and Method for Fabricating a Semiconductor Device Public/Granted day:2020-05-28
Information query
IPC分类: