Invention Grant
- Patent Title: Semiconductor memory device
-
Application No.: US17016185Application Date: 2020-09-09
-
Publication No.: US11100988B2Publication Date: 2021-08-24
- Inventor: Tsuneo Inaba , Hiroyuki Takenaka , Akihiko Chiba
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz & Volek PC
- Priority: JPJP2019-219569 20191204
- Main IPC: G11C13/00
- IPC: G11C13/00 ; H01L27/24

Abstract:
According to one embodiment, a semiconductor memory device includes the following configuration. First Lower word line drivers are arranged between adjacent mats, and first upper word line drivers are arranged between the first Lower word line drivers. Second Lower word line drivers are arranged between another adjacent mats, and second upper word line drivers are arranged between the second lower word line drivers. The first and second upper word line drivers are shared by the adjacent mats respectively.
Public/Granted literature
- US20210174870A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2021-06-10
Information query