- 专利标题： Semiconductor device and method for manufacturing the same
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申请号： US16634493申请日： 2018-07-26
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公开(公告)号： US11101386B2公开(公告)日： 2021-08-24
- 发明人: Shunpei Yamazaki , Daisuke Matsubayashi , Ryota Hodo , Daigo Ito , Hiroaki Honda , Satoru Okamoto
- 申请人： Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址： JP Atsugi
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi
- 代理机构： Robinson Intellectual Property Law Office
- 代理商 Eric J. Robinson
- 优先权： JPJP2017-151412 20170804
- 国际申请： PCT/IB2018/055581 WO 20180726
- 国际公布： WO2019/025912 WO 20190207
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; G11C11/4091 ; H01L27/108 ; H01L27/105 ; H01L27/12 ; H01L29/423 ; H01L29/49 ; H01L29/66 ; H01L29/24 ; H01L29/417
摘要：
A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an oxide; a first conductor and a second conductor over the oxide; a third conductor over the oxide; a first insulator provided between the oxide and the third conductor and covering a side surface of the third conductor; a second insulator over the third conductor and the first insulator; a third insulator positioned over the first conductor and at a side surface of the second insulator; a fourth insulator positioned over the second conductor and at a side surface of the second insulator; a fourth conductor being in contact with a top surface and a side surface of the third insulator and electrically connected to the first conductor; and a fifth conductor being in contact with a top surface and a side surface of the fourth insulator and electrically connected to the second conductor. The first insulator is between the third insulator and the third conductor, and between the fourth insulator and the third conductor.
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