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公开(公告)号：US11791201B2
公开(公告)日：2023-10-17
申请号：US17307155
申请日：2021-05-04
发明人： Motomu Kurata , Shinya Sasagawa , Ryota Hodo , Yuta Iida , Satoru Okamoto
IPC分类号： H01L21/76 , H01L21/768 , H01L29/786
CPC分类号： H01L21/76802 , H01L21/76814 , H01L21/76843 , H01L21/76855 , H01L29/78666
摘要： A minute transistor is provided. A transistor having low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. An electrode including the transistor is provided. A novel electrode is provided. The electrode includes a first conductive layer containing a metal, an insulating layer, and a second conductive layer. The insulating layer is formed over the first conductive layer. A mask layer is formed over the insulating layer. The insulating layer is etched using plasma with the mask layer used as a mask, whereby an opening is formed in the insulating layer so as to reach the first conductive layer. Plasma treatment is performed on at least the opening in an oxygen atmosphere. By the plasma treatment, a metal-containing oxide is formed on the first conductive layer in the opening. The oxide is removed, and then the second conductive layer is formed in the opening.
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公开(公告)号：US11776966B2
公开(公告)日：2023-10-03
申请号：US17329250
申请日：2021-05-25
发明人： Ryota Hodo , Motomu Kurata , Shinya Sasagawa , Satoru Okamoto , Shunpei Yamazaki
IPC分类号： H01L27/12 , H01L29/786 , H01L29/66 , H01L21/467 , H01L21/463 , H01L21/768 , H01L21/02 , H01L23/522 , H01L23/532 , H01L29/778
CPC分类号： H01L27/1225 , H01L21/02565 , H01L21/463 , H01L21/467 , H01L21/76895 , H01L23/5226 , H01L23/53295 , H01L27/1288 , H01L29/66969 , H01L29/7869 , H01L29/78603 , H01L29/78648 , H01L29/78696 , H01L23/53238 , H01L29/7781 , H01L29/7782
摘要： First to third insulators are successively formed in this order over a first conductor over a semiconductor substrate; a hard mask with a first opening is formed thereover; a resist mask with a second opening is formed thereover; a third opening is formed in the third insulator; a fourth opening is formed in the second insulator; the resist mask is removed; a fifth opening is formed in the first to third insulators; a second conductor is formed to cover an inner wall and a bottom surface of the fifth opening; a third conductor is formed thereover; polishing treatment is performed so that the hard mask is removed, and that levels of top surfaces of the second and third conductors and the third insulator are substantially equal to each other; and an oxide semiconductor is formed thereover. The second insulator is less permeable to hydrogen than the first and third insulators, the second conductor is less permeable to hydrogen than the third conductor.
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公开(公告)号：US11004727B2
公开(公告)日：2021-05-11
申请号：US16556330
申请日：2019-08-30
发明人： Motomu Kurata , Shinya Sasagawa , Ryota Hodo , Yuta Iida , Satoru Okamoto
IPC分类号： H01L21/76 , H01L21/768 , H01L29/786
摘要： A minute transistor is provided. A transistor having low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. An electrode including the transistor is provided. A novel electrode is provided. The electrode includes a first conductive layer containing a metal, an insulating layer, and a second conductive layer. The insulating layer is formed over the first conductive layer. A mask layer is formed over the insulating layer. The insulating layer is etched using plasma with the mask layer used as a mask, whereby an opening is formed in the insulating layer so as to reach the first conductive layer. Plasma treatment is performed on at least the opening in an oxygen atmosphere. By the plasma treatment, a metal-containing oxide is formed on the first conductive layer in the opening. The oxide is removed, and then the second conductive layer is formed in the opening.
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公开(公告)号：US10446671B2
公开(公告)日：2019-10-15
申请号：US15822284
申请日：2017-11-27
发明人： Satoru Okamoto , Shinya Sasagawa
IPC分类号： H01L29/423 , H01L29/786 , H01L29/66 , H01L29/22 , H01L29/24 , H01L29/40 , H01L29/78 , H01L21/385 , H01L27/12
摘要： A minute transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A semiconductor device including the transistor is provided. A semiconductor device includes an oxide semiconductor, a first conductor, a second conductor, a third conductor, a first insulator, and a second insulator. The first conductor overlaps with the oxide semiconductor with the first insulator positioned therebetween. The second insulator has an opening and a side surface of the second insulator overlaps with a side surface of the first conductor in the opening with the first insulator positioned therebetween. Part of a surface of the second conductor and part of a surface of the third conductor are in contact with the first insulator in the opening. The oxide semiconductor overlaps with the second conductor and the third conductor.
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公开(公告)号：US20180248043A1
公开(公告)日：2018-08-30
申请号：US15959548
申请日：2018-04-23
IPC分类号： H01L29/786
摘要： A semiconductor device includes a first oxide insulating layer over a first insulating layer, an oxide semiconductor layer over the first oxide insulating layer, a source electrode layer and a drain electrode layer over the oxide semiconductor layer, a second insulating layer over the source electrode layer and the drain electrode layer, a second oxide insulating layer over the oxide semiconductor layer, a gate insulating layer over the second oxide insulating layer, a gate electrode layer over the gate insulating layer, and a third insulating layer over the second insulating layer, the second oxide insulating layer, the gate insulating layer, and the gate electrode layer. A side surface portion of the second insulating layer is in contact with the second oxide insulating layer. The gate electrode layer includes a first region and a second region. The first region has a width larger than that of the second region.
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公开(公告)号：US09935203B2
公开(公告)日：2018-04-03
申请号：US15696231
申请日：2017-09-06
IPC分类号： H01L29/786 , H01L29/66 , H01L27/12 , H01L21/465 , H01L21/4757 , H01L29/423 , H01L21/4763
CPC分类号： H01L29/7869 , H01L21/465 , H01L21/47573 , H01L21/47635 , H01L27/1207 , H01L27/1225 , H01L29/42372 , H01L29/42384 , H01L29/66969 , H01L29/78648
摘要： A minute transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A transistor having a high on-state current is provided. A semiconductor device including the transistor is provided. A semiconductor device having a high degree of integration is provided. A semiconductor device including an oxide semiconductor; a second insulator; a second conductor; a third conductor; a fourth conductor; a fifth conductor; a first conductor and a first insulator embedded in an opening portion formed in the second insulator, the second conductor, the third conductor, the fourth conductor, and the fifth conductor; a region where a side surface and a bottom surface of the second conductor are in contact with the fourth conductor; and a region where a side surface and a bottom surface of the third conductor are in contact with the fifth conductor.
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公开(公告)号：US09825177B2
公开(公告)日：2017-11-21
申请号：US15217080
申请日：2016-07-22
发明人： Shunpei Yamazaki , Shinya Sasagawa , Satoru Okamoto , Motomu Kurata , Yuta Endo
IPC分类号： H01L29/00 , H01L29/786 , H01L29/66
CPC分类号： H01L29/7869 , H01L21/8258 , H01L22/12 , H01L27/0688 , H01L27/1225 , H01L29/42384 , H01L29/66969 , H01L29/78648
摘要： A semiconductor device which includes a transistor having a miniaturized structure is provided. A first insulator is provided over a stack in which a semiconductor, a first conductor, and a second conductor are stacked in this order. Over the first insulator, an etching mask is formed. Using the etching mask, the first insulator and the second conductor are etched until the first conductor is exposed. After etching the first conductor until the semiconductor is exposed so as to form a groove having a smaller width than the second conductor, a second insulator and a third conductor are formed sequentially.
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公开(公告)号：US20140104506A1
公开(公告)日：2014-04-17
申请号：US14047168
申请日：2013-10-07
发明人： Satoru Okamoto , Shunpei YAMAZAKI
IPC分类号： G02F1/1333
CPC分类号： G06F1/1616 , G02F1/13338 , G02F2203/02 , G06F1/1626 , G06F1/1637 , G06F1/1643 , G06F1/1647 , G06F1/1684 , G06F1/1686 , G06F3/0412 , G06F3/14 , G09G3/20 , G09G5/22 , G09G2300/0842 , G09G2340/0407 , H01L27/323 , H01L27/3234 , H01L27/3244 , H04M1/0214 , H04M1/0247 , H04M1/72519 , H04M2250/16 , H04M2250/22
摘要： When image data is displayed on the display portion of a conventional mobile telephone, characters cannot be displayed thereon, and thus the image data and the characters cannot be simultaneously displayed. In a portable electronic device according to the present invention, a cover member having a first display device (101) for displaying an image (digital still image or the like) and a second display device (102) having a touch input operational portion (for displaying characters, symbols, or the like) are attached to each other so as to allow opening and closing.
摘要翻译： 当在常规移动电话的显示部分上显示图像数据时，不能在其上显示字符，因此不能同时显示图像数据和字符。 在根据本发明的便携式电子设备中，具有用于显示图像的第一显示设备（101）（数字静态图像等）和具有触摸输入操作部分的第二显示设备（102）的盖构件（用于 显示字符，符号等）彼此附接以允许打开和关闭。
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公开(公告)号：US11011542B2
公开(公告)日：2021-05-18
申请号：US16786273
申请日：2020-02-10
IPC分类号： H01L27/11582 , H01L27/1157 , H01L27/11565 , H01L27/11573 , H01L27/11575 , H01L29/24 , H01L29/51
摘要： A semiconductor device with a large storage capacity per unit area is provided. The semiconductor device includes a first insulator including a first opening, a first conductor that is over the first insulator and includes a second opening, a second insulator that is over the first insulator and includes a third opening, and an oxide penetrating the first opening, the second opening, and the third opening. The oxide includes a first region at least in the first opening, a second region at least in the second opening, and a third region at least in the third opening. The resistances of the first region and the third region are lower than the resistance of the second region.
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公开(公告)号：US10593693B2
公开(公告)日：2020-03-17
申请号：US16004890
申请日：2018-06-11
IPC分类号： H01L27/11582 , H01L27/1157 , H01L27/11565 , H01L27/11573 , H01L27/11575 , H01L29/24 , H01L29/51
摘要： A semiconductor device with a large storage capacity per unit area is provided. The semiconductor device includes a first insulator including a first opening, a first conductor that is over the first insulator and includes a second opening, a second insulator that is over the first insulator and includes a third opening, and an oxide penetrating the first opening, the second opening, and the third opening. The oxide includes a first region at least in the first opening, a second region at least in the second opening, and a third region at least in the third opening. The resistances of the first region and the third region are lower than the resistance of the second region.
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