Invention Grant
- Patent Title: Trench gate semiconductor device with dummy gate electrode and manufacturing method of the same
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Application No.: US16272601Application Date: 2019-02-11
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Publication No.: US11107912B2Publication Date: 2021-08-31
- Inventor: Yoshito Nakazawa , Yuji Yatsuda
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Roberts Calderon Safran & Cole, P.C.
- Agent David S. Safran
- Priority: JP2005-147914 20050520
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/40 ; H01L29/423 ; H01L29/66 ; H01L27/02 ; H01L21/28 ; H01L21/285 ; H01L29/49 ; H01L29/45
Abstract:
A semiconductor device including a field-effect transistor having source and drain source regions, first and second gate electrodes and a protective diode connected to the transistor. The first gate electrode is formed over a first gate insulating film in a lower part of a trench. The second gate electrode is formed over a second gate insulating film in an upper part of the trench. The first gate electrode includes a first polysilicon film, and the second gate electrode includes a second polysilicon film, wherein an impurity concentration of the first polysilicon film is lower than an impurity concentration of the second polysilicon film.
Public/Granted literature
- US20190189798A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2019-06-20
Information query
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