Invention Grant
- Patent Title: Photodiode
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Application No.: US16789997Application Date: 2020-02-13
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Publication No.: US11107938B2Publication Date: 2021-08-31
- Inventor: Boris Rodrigues Goncalves , Arnaud Tournier
- Applicant: STMicroelectronics (Crolles 2) SAS
- Applicant Address: FR Crolles
- Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee Address: FR Crolles
- Agency: Crowe & Dunlevy
- Priority: FR1901504 20190214
- Main IPC: H01L31/0352
- IPC: H01L31/0352 ; H01L27/146 ; H01L31/02 ; H01L31/0203

Abstract:
A photodiode include a first substrate layer of a first dopant type and a second substrate layer of a second dopant type on top of the first substrate layer. Semiconductor walls are provided in a semiconductor substrate which includes the first and second substrate layers. The semiconductor walls include: two outer semiconductor walls and at least one inside semiconductor wall positioned between the two outer semiconductor walls. Each inside semiconductor wall is located between two semiconductor walls having longer length.
Public/Granted literature
- US20200266310A1 PHOTODIODE Public/Granted day:2020-08-20
Information query
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