发明授权
- 专利标题: Memory device
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申请号: US17015408申请日: 2020-09-09
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公开(公告)号: US11120866B1公开(公告)日: 2021-09-14
- 发明人: Takahiko Iizuka , Daisaburo Takashima , Ryu Ogiwara
- 申请人: Kioxia Corporation
- 申请人地址: JP Tokyo
- 专利权人: Kioxia Corporation
- 当前专利权人: Kioxia Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JPJP2020-041417 20200310
- 主分类号: G11C11/40
- IPC分类号: G11C11/40 ; G11C11/4096 ; G11C11/4094 ; G11C5/06 ; G11C11/408 ; G11C5/02 ; G11C11/4074
摘要:
According to one embodiment, a driver that sequentially supplies a first voltage, a second voltage higher than the first voltage, and the first voltage to the bit line, during the writing operation to the first memory cell. The driver supplies a third voltage to the second word line and a fourth voltage to the second selecting gate line while changing the voltage of the bit line from the second voltage to the first voltage if a data is a first data. The driver supplies a fifth voltage to the second word line and a sixth voltage to the second selecting gate line while changing the voltage of the bit line from the second voltage to the first voltage if the data is a second data. At least the sixth voltage is larger than the fourth voltage or the fifth voltage is larger than the third voltage.
公开/授权文献
- US20210287733A1 MEMORY DEVICE 公开/授权日:2021-09-16
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