发明授权

Memory device
摘要:
According to one embodiment, a driver that sequentially supplies a first voltage, a second voltage higher than the first voltage, and the first voltage to the bit line, during the writing operation to the first memory cell. The driver supplies a third voltage to the second word line and a fourth voltage to the second selecting gate line while changing the voltage of the bit line from the second voltage to the first voltage if a data is a first data. The driver supplies a fifth voltage to the second word line and a sixth voltage to the second selecting gate line while changing the voltage of the bit line from the second voltage to the first voltage if the data is a second data. At least the sixth voltage is larger than the fourth voltage or the fifth voltage is larger than the third voltage.
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