- 专利标题： Method of manufacture of a semiconductor device
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申请号： US15869305申请日： 2018-01-12
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公开(公告)号： US11121050B2公开(公告)日： 2021-09-14
- 发明人: Kuan-Yu Huang , Chih-Wei Wu , Li-Chung Kuo , Long Hua Lee , Sung-Hui Huang , Ying-Ching Shih , Pai Yuan Li
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L21/56
- IPC分类号： H01L21/56 ; H01L23/31 ; H01L21/78 ; H01L23/00 ; H01L23/498
摘要：
In order to prevent cracks from occurring at the corners of semiconductor dies after the semiconductor dies have been bonded to other substrates, an opening is formed adjacent to the corners of the semiconductor dies, and the openings are filled and overfilled with a buffer material that has physical properties that are between the physical properties of the semiconductor die and an underfill material that is placed adjacent to the buffer material.
公开/授权文献
- US20190006256A1 Semiconductor Device and Method of Manufacture 公开/授权日：2019-01-03
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