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公开(公告)号：US20200006181A1
公开(公告)日：2020-01-02
申请号：US16177637
申请日：2018-11-01
发明人： Yu-Wei Chen , Li-Chung Kuo , Ying-Ching Shih , Szu-Wei Lu , Jing-Cheng Lin , Long Hua Lee , Kuan-Yu Huang
IPC分类号： H01L23/31 , H01L23/498 , H01L21/56 , H01L25/065 , H01L23/00
摘要： A method for forming an underfill structure and semiconductor packages including the underfill structure are disclosed. In an embodiment, the semiconductor package may include a package including an integrated circuit die; an interposer bonded to the integrated circuit die by a plurality of die connectors; and an encapsulant surrounding the integrated circuit die. The semiconductor package may further include a package substrate bonded to the interposer by a plurality of conductive connectors; a first underfill between the package and the package substrate, the first underfill having a first coefficient of thermal expansion (CTE); and a second underfill surrounding the first underfill, the second underfill having a second CTE less than the first CTE.
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公开(公告)号：US11201097B2
公开(公告)日：2021-12-14
申请号：US16569972
申请日：2019-09-13
发明人： Kuan-Yu Huang , Chih-Wei Wu , Li-Chung Kuo , Long Hua Lee , Sung-Hui Huang , Ying-Ching Shih , Pai Yuan Li
IPC分类号： H01L23/31 , H01L21/78 , H01L21/56 , H01L23/00 , H01L23/498
摘要： In order to prevent cracks from occurring at the corners of semiconductor dies after the semiconductor dies have been bonded to other substrates, an opening is formed adjacent to the corners of the semiconductor dies, and the openings are filled and overfilled with a buffer material that has physical properties that are between the physical properties of the semiconductor die and an underfill material that is placed adjacent to the buffer material.
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公开(公告)号：US11101236B2
公开(公告)日：2021-08-24
申请号：US16445963
申请日：2019-06-19
发明人： Kuan-Yu Huang , Li-Chung Kuo , Sung-Hui Huang , Shang-Yun Hou , Tsung-Yu Chen , Chien-Yuan Huang
IPC分类号： H01L23/00 , H01L25/065 , H01L23/32 , H01L21/60
摘要： A method of forming a semiconductor device includes applying an adhesive material in a first region of an upper surface of a substrate, where applying the adhesive material includes: applying a first adhesive material at first locations of the first region; and applying a second adhesive material at second locations of the first region, the second adhesive material having a different material composition from the first adhesive material. The method further includes attaching a ring to the upper surface of the substrate using the adhesive material applied on the upper surface of the substrate, where the adhesive material is between the ring and the substrate after the ring is attached.
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公开(公告)号：US20170213809A1
公开(公告)日：2017-07-27
申请号：US15483689
申请日：2017-04-10
发明人： Szu-Wei Lu , Ying-Da Wang , Li-Chung Kuo , Jing-Cheng Lin
IPC分类号： H01L25/065 , H01L21/78 , H01L21/56 , H01L23/31
CPC分类号： H01L25/0655 , H01L21/561 , H01L21/563 , H01L21/565 , H01L21/78 , H01L23/3135 , H01L23/3178 , H01L23/3185 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/32 , H01L24/73 , H01L24/83 , H01L24/92 , H01L24/94 , H01L24/97 , H01L25/0652 , H01L2224/0401 , H01L2224/05569 , H01L2224/0557 , H01L2224/06181 , H01L2224/11464 , H01L2224/13147 , H01L2224/13155 , H01L2224/1403 , H01L2224/14181 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/32145 , H01L2224/32225 , H01L2224/73204 , H01L2224/83862 , H01L2224/83874 , H01L2224/92125 , H01L2224/93 , H01L2224/94 , H01L2224/97 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/10156 , H01L2924/10253 , H01L2924/10271 , H01L2924/10272 , H01L2924/12042 , H01L2924/14 , H01L2924/1431 , H01L2924/1434 , H01L2924/15311 , H01L2924/157 , H01L2924/181 , H01L2924/18161 , H01L2924/3511 , H01L2224/81 , H01L2924/00012 , H01L2224/11 , H01L2924/00 , H01L2224/05552
摘要： A method includes bonding a first and a second package component on a top surface of a third package component, and dispensing a polymer. The polymer includes a first portion in a space between the first and the third package components, a second portion in a space between the second and the third package components, and a third portion in a gap between the first and the second package components. A curing step is then performed on the polymer. After the curing step, the third portion of the polymer is sawed to form a trench between the first and the second package components.
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公开(公告)号：US20200006178A1
公开(公告)日：2020-01-02
申请号：US16569972
申请日：2019-09-13
发明人： Kuan-Yu Huang , Chih-Wei Wu , Li-Chung Kuo , Long Hua Lee , Sung-Hui Huang , Ying-Ching Shih , Pai Yuan Li
摘要： In order to prevent cracks from occurring at the corners of semiconductor dies after the semiconductor dies have been bonded to other substrates, an opening is formed adjacent to the corners of the semiconductor dies, and the openings are filled and overfilled with a buffer material that has physical properties that are between the physical properties of the semiconductor die and an underfill material that is placed adjacent to the buffer material.
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公开(公告)号：US20190237454A1
公开(公告)日：2019-08-01
申请号：US16051848
申请日：2018-08-01
发明人： Shang-Yun Hou , Sung-Hui Huang , Kuan-Yu Huang , Hsien-Pin Hu , Yushun Lin , Heh-Chang Huang , Hsing-Kuo Hsia , Chih-Chieh Hung , Ying-Ching Shih , Chin-Fu Kao , Wen-Hsin Wei , Li-Chung Kuo , Chi-Hsi Wu , Chen-Hua Yu
IPC分类号： H01L25/00 , H01L25/065 , H01L23/24 , H01L23/31 , H01L23/498 , H01L21/48
CPC分类号： H01L25/50 , H01L21/4803 , H01L21/4853 , H01L23/24 , H01L23/3128 , H01L23/49827 , H01L24/16 , H01L25/0652 , H01L25/0655 , H01L2224/16235
摘要： An integrated circuit package and a method of forming the same are provided. The method includes attaching an integrated circuit die to a first substrate. A dummy die is formed. The dummy die is attached to the first substrate adjacent the integrated circuit die. An encapsulant is formed over the first substrate and surrounding the dummy die and the integrated circuit die. The encapsulant, the dummy die and the integrated circuit die are planarized, a topmost surface of the encapsulant being substantially level with a topmost surface of the dummy die and a topmost surface of the integrated circuit die. An interior portion of the dummy die is removed. A remaining portion of the dummy die forms an annular structure.
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公开(公告)号：US11482465B2
公开(公告)日：2022-10-25
申请号：US16657248
申请日：2019-10-18
发明人： Chen-Hua Yu , Szu-Wei Lu , Ying-Ching Shih , Li-Chung Kuo
IPC分类号： H01L23/373 , H01L23/498 , H01L23/532 , H01L21/56
摘要： 3D semiconductor packages and methods of forming 3D semiconductor package are described herein. The 3D semiconductor packages are formed by mounting a die stack on an interposer, dispensing a thermal interface material (TIM) layer over the die stack and placing a heat spreading element over and attached to the die stack by the TIM layer. The TIM layer provides a reliable adhesion layer and an efficient thermally conductive path between the die stack and interposer to the heat spreading element. As such, delamination of the TIM layer from the heat spreading element is prevented, efficient heat transfer from the die stack to the heat spreading element is provided, and a thermal resistance along thermal paths through the TIM layer between the interposer and heat spreading element are reduced. Thus, the TIM layer reduces overall operating temperatures and increases overall reliability of the 3D semiconductor packages.
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公开(公告)号：US11121050B2
公开(公告)日：2021-09-14
申请号：US15869305
申请日：2018-01-12
发明人： Kuan-Yu Huang , Chih-Wei Wu , Li-Chung Kuo , Long Hua Lee , Sung-Hui Huang , Ying-Ching Shih , Pai Yuan Li
IPC分类号： H01L21/56 , H01L23/31 , H01L21/78 , H01L23/00 , H01L23/498
摘要： In order to prevent cracks from occurring at the corners of semiconductor dies after the semiconductor dies have been bonded to other substrates, an opening is formed adjacent to the corners of the semiconductor dies, and the openings are filled and overfilled with a buffer material that has physical properties that are between the physical properties of the semiconductor die and an underfill material that is placed adjacent to the buffer material.
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公开(公告)号：US11075133B2
公开(公告)日：2021-07-27
申请号：US16177637
申请日：2018-11-01
发明人： Yu-Wei Chen , Li-Chung Kuo , Ying-Ching Shih , Szu-Wei Lu , Jing-Cheng Lin , Long Hua Lee , Kuan-Yu Huang
IPC分类号： H01L23/31 , H01L23/498 , H01L21/56 , H01L23/00 , H01L25/065
摘要： A method for forming an underfill structure and semiconductor packages including the underfill structure are disclosed. In an embodiment, the semiconductor package may include a package including an integrated circuit die; an interposer bonded to the integrated circuit die by a plurality of die connectors; and an encapsulant surrounding the integrated circuit die. The semiconductor package may further include a package substrate bonded to the interposer by a plurality of conductive connectors; a first underfill between the package and the package substrate, the first underfill having a first coefficient of thermal expansion (CTE); and a second underfill surrounding the first underfill, the second underfill having a second CTE less than the first CTE.
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公开(公告)号：US20200365525A1
公开(公告)日：2020-11-19
申请号：US16415009
申请日：2019-05-17
发明人： Chih-Wei Wu , Li-Chung Kuo , Pu Wang , Ying-Ching Shih , Szu-Wei Lu , Kung-Chen Yeh
IPC分类号： H01L23/00 , H01L21/56 , H01L21/3105 , H01L21/78 , H01L25/00 , H01L23/31 , H01L25/18 , H01L23/498 , H01L21/48
摘要： A method includes bonding a second package component to a first package component, bonding a third package component to the first package component, attaching a dummy die to the first package component, encapsulating the second package component, the third package component, and the dummy die in an encapsulant, and performing a planarization process to level a top surface of the second package component with a top surface of the encapsulant. After the planarization process, an upper portion of the encapsulant overlaps the dummy die. The dummy die is sawed-through to separate the dummy die into a first dummy die portion and a second dummy die portion. The upper portion of the encapsulant is also sawed through.
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