Invention Grant
- Patent Title: Quantum dots, production methods thereof, and electronic devices including the same
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Application No.: US16798948Application Date: 2020-02-24
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Publication No.: US11124702B2Publication Date: 2021-09-21
- Inventor: Jihyun Min , Eun Joo Jang , Yongwook Kim , Garam Park
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Cantor Colburn LLP
- Priority: KR10-2015-0150441 20151028
- Main IPC: C09K11/02
- IPC: C09K11/02 ; C09K11/66 ; C09K11/88 ; C08K3/16 ; C09K11/61 ; H01L27/32 ; B82Y20/00 ; B82Y40/00
Abstract:
A quantum dot having a perovskite crystal structure and including a compound represented by Chemical Formula 1: ABX3+α Chemical Formula 1 wherein, A is a Group IA metal selected from Rb, Cs, Fr, and a combination thereof, B is a Group IVA metal selected from Si, Ge, Sn, Pb, and a combination thereof, X is a halogen selected from F, Cl, Br, and I, BR4, or a combination thereof, and α is greater than 0 and less than or equal to about 3; and wherein the quantum dot has a size of about 1 nanometer to about 50 nanometers.
Information query
