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公开(公告)号:US12189170B2
公开(公告)日:2025-01-07
申请号:US17576895
申请日:2022-01-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Tae Hyung Kim , Eun Joo Jang , Shin Ae Jun , Hyun A Kang , Yongwook Kim , Na Youn Won , Hyo Sook Jang
IPC: F21V8/00 , G02F1/1335 , G02F1/13357
Abstract: A light source includes a light emitting element which emits light, and a light conversion layer which converts the light emitted from the light emitting element into white light and emits the white light, where the light conversion layer includes a resin and a quantum dot material mixed with the resin, and a red apex of a color region of the white light is positioned in a region of 0.65
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公开(公告)号:US11355583B2
公开(公告)日:2022-06-07
申请号:US15659758
申请日:2017-07-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Soo Kyung Kwon , Yongwook Kim , Eun Joo Jang , Jihyun Min
Abstract: A quantum dot includes: a core including a first semiconductor nanocrystal, and a shell disposed on the core, the shell including a second semiconductor nanocrystal and a dopant, wherein the first semiconductor nanocrystal includes a Group III-V compound, the second semiconductor nanocrystal includes zinc (Zn), sulfur (S), and selenium, and the dopant includes lithium, a Group 2A metal having an effective ionic radius less than an effective ionic radius of Zn2+, a Group 3A element having an effective ionic radius less than an effective ionic radius of Zn2+, or a combination thereof. Also a method of producing the quantum dot, and a composite, and an electronic device including the quantum dot.
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公开(公告)号:US11280953B2
公开(公告)日:2022-03-22
申请号:US16796207
申请日:2020-02-20
Applicant: Samsung Electronics Co., Ltd.
Inventor: Tae Hyung Kim , Jihyun Min , Yongwook Kim , Eun Joo Jang
Abstract: An electronic device includes, a light source having a peak emission at a wavelength between about 440 nm to about 480 nm; and a photoconversion layer disposed on the light source, wherein the photoconversion layer includes a first quantum dot which emits red light and a second quantum dot which emits green light, wherein at least one of the first quantum dot and the second quantum dot has a perovskite crystal structure and includes a compound represented by Chemical Formula 1: AB′X3+α Chemical Formula 1 wherein A is a Group IA metal, NR4+, or a combination thereof, B′ is a Group IVA metal, X is a halogen, BF4−, or a combination thereof, and α is 0 to 3.
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公开(公告)号:US10711193B2
公开(公告)日:2020-07-14
申请号:US16205323
申请日:2018-11-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Yongwook Kim , Sungwoo Hwang , Soo Kyung Kwon , Yuho Won , Eun Joo Jang , Hyo Sook Jang
Abstract: A quantum dot, a method of producing the same, a quantum dot polymer composite including the same, and an electronic device. The quantum dot includes a core including a first semiconductor nanocrystal and a shell disposed on the core, the shell including a second semiconductor nanocrystal and a metal dopant, wherein the first semiconductor nanocrystal includes a Group II-VI compound, a Group III-V compound, or a combination thereof, the second semiconductor nanocrystal includes a Group II-VI compound, and the metal dopant includes hafnium, zirconium, titanium, or a combination thereof.
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公开(公告)号:US10573317B2
公开(公告)日:2020-02-25
申请号:US16103195
申请日:2018-08-14
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yongwook Kim , Jamin Goo , Gangheok Kim , Dongkyu Lee
Abstract: An electronic device and method are disclosed herein. The electronic device implements the method, including: receiving a first speech, and extracting a first text from the received first speech, in response to detecting that extraction of the first text includes errors such that a request associated with the first speech is unprocessable, storing the extracted first text, receiving a second speech and extracting a second text from the received second speech, in response to detecting that the request is processable using the extracted second text, detecting whether a similarity between the first and second texts is greater than a similarity threshold, and whether the second speech is received within a predetermined time duration of receiving the first speech, and when the similarity is greater than the threshold, and the first and second speech signals are received within the time duration, storing the first text in association with the second text.
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公开(公告)号:US10559712B2
公开(公告)日:2020-02-11
申请号:US16111848
申请日:2018-08-24
Applicant: Samsung Electronics Co., Ltd.
Inventor: Garam Park , Tae Hyung Kim , Eun Joo Jang , Hyo Sook Jang , Shin Ae Jun , Yongwook Kim , Taekhoon Kim , Jihyun Min , Yuho Won
IPC: H01L33/04 , C09K11/61 , H01L33/28 , H01L33/34 , C09K11/02 , C09K11/70 , C09K11/88 , H01L33/24 , H01L33/30 , H01L33/32
Abstract: A quantum dot includes a core-shell structure including a core including a first semiconductor nanocrystal and a shell disposed on the core, and including a material at least two different halogens, and the quantum dot does not include cadmium.
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公开(公告)号:US10075896B2
公开(公告)日:2018-09-11
申请号:US15178655
申请日:2016-06-10
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yongwook Kim , Dong-Hoon Kim , Byoung-Joo Kim , Dongouk Moon , Tai Ho Choi
CPC classification number: H04W40/244 , G06Q30/0241 , H04L67/303 , H04M1/72583 , H04W4/021 , H04W4/80
Abstract: A method for use in an electronic device includes: receiving, from a server, beacon information including a first function information. The first function information is associated with a first function, and the first function is executed in response to detecting that a beacon signal that is received from a beacon transmitter matches beacon information.
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公开(公告)号:US11060019B2
公开(公告)日:2021-07-13
申请号:US16158483
申请日:2018-10-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Yongwook Kim , Eun Joo Jang , Tae Gon Kim , Shang Hyeun Park , Hyo Sook Jang , Young-soo Jeong
IPC: C09K11/65 , C09K11/02 , B82Y20/00 , B82Y30/00 , B82Y40/00 , C09K11/88 , C09K11/08 , G02F1/1335 , G02F1/13357 , H01L27/32
Abstract: A composition comprising: a plurality of quantum dots; a plurality of luminous carbon nanoparticles; a carboxylic acid group-containing binder; a polymerizable monomer including a carbon-carbon double bond; and an initiator, wherein the plurality of quantum dots comprises a Group II-VI compound, a Group III-V compound, a Group IV-VI compound, or a combination thereof, the plurality of luminous carbon nanoparticles have a size of less than or equal to about 10 nanometers, and exhibit both a D band and a G band in a Raman spectrum thereof, and at least a portion of the plurality of luminous carbon nanoparticles absorb light having a wavelength of greater than or equal to about 400 nanometers and a maximum luminous peak wavelength thereof is greater than or equal to about 480 nanometers.
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公开(公告)号:US10597580B2
公开(公告)日:2020-03-24
申请号:US15335700
申请日:2016-10-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jihyun Min , Eun Joo Jang , Yongwook Kim , Garam Park
Abstract: A quantum dot having a perovskite crystal structure and including a compound represented by Chemical Formula 1: ABX3+α Chemical Formula 1 wherein, A is a Group IA metal selected from Rb, Cs, Fr, and a combination thereof, B is a Group IVA metal selected from Si, Ge, Sn, Pb, and a combination thereof, X is a halogen selected from F, Cl, Br, and I, BF4, or a combination thereof, and α is greater than 0 and less than or equal to about 3; and wherein the quantum dot has a size of about 1 nanometer to about 50 nanometers.
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公开(公告)号:US10323179B2
公开(公告)日:2019-06-18
申请号:US15335700
申请日:2016-10-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jihyun Min , Eun Joo Jang , Yongwook Kim , Garam Park
Abstract: A quantum dot having a perovskite crystal structure and including a compound represented by Chemical Formula 1: ABX3+α Chemical Formula 1 wherein, A is a Group IA metal selected from Rb, Cs, Fr, and a combination thereof, B is a Group IVA metal selected from Si, Ge, Sn, Pb, and a combination thereof, X is a halogen selected from F, Cl, Br, and I, BF4, or a combination thereof, and α is greater than 0 and less than or equal to about 3; and wherein the quantum dot has a size of about 1 nanometer to about 50 nanometers.
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