Invention Grant
- Patent Title: Gate structures
-
Application No.: US16599684Application Date: 2019-10-11
-
Publication No.: US11127834B2Publication Date: 2021-09-21
- Inventor: Jiehui Shu , Sipeng Gu , Halting Wang
- Applicant: GLOBALFOUNDRIES U.S. INC.
- Applicant Address: US CA Santa Clara
- Assignee: GLOBALFOUNDRIES U.S. INC.
- Current Assignee: GLOBALFOUNDRIES U.S. INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Roberts Calderon Safran & Cole, P.C.
- Agent Francois Pagette; Andrew M. Calderon
- Main IPC: H01L29/49
- IPC: H01L29/49 ; H01L29/66 ; H01L27/088 ; H01L29/78 ; H01L29/40

Abstract:
The present disclosure generally relates to semiconductor structures and, more particularly, to gate structures and methods of manufacture. The method includes: forming a first gate structure and a second gate structure with gate materials; etching the gate materials within the second gate structure to form a trench; and depositing a conductive material within the trench so that the second gate structure has a metal composition different than the first gate structure.
Public/Granted literature
- US20210111264A1 GATE STRUCTURES Public/Granted day:2021-04-15
Information query
IPC分类: