Invention Grant
- Patent Title: Spin-orbit-torque magnetization rotating element, spin-orbit-torque magnetoresistance effect element, and magnetic memory
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Application No.: US16349537Application Date: 2018-10-30
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Publication No.: US11127894B2Publication Date: 2021-09-21
- Inventor: Katsuyuki Nakada , Yohei Shiokawa
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JPJP2018-029737 20180222
- International Application: PCT/JP2018/040221 WO 20181030
- International Announcement: WO2019/163203 WO 20190829
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L27/22
Abstract:
This spin-orbit-torque magnetization rotating element includes a spin-orbit torque wiring extending in a first direction and a first ferromagnetic layer laminated on the spin-orbit torque wiring, wherein the spin-orbit torque wiring includes a compound represented by XYZ or X2YZ with respect to a stoichiometric composition.
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