Memories including a controller configured to cause the memory to read a plurality of memory cells using a read voltage having a particular voltage level, determine a number of memory cells of a first subset of memory cells of the plurality of memory cells having a particular data state in response to the read voltage having the particular voltage level, and in response to determining that the number of memory cells of the first subset of memory cells having the particular data state is less than a particular threshold, adjust the voltage level of the read voltage based on the number of memory cells of the first subset of memory cells having the particular data state, and re-read the plurality of memory cells using the read voltage having the adjusted voltage level.