Invention Grant
- Patent Title: DRAM with a hydrogen-supply layer and a high-capacitance embedded capacitor with a cylindrical storage node
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Application No.: US16420387Application Date: 2019-05-23
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Publication No.: US11133317B2Publication Date: 2021-09-28
- Inventor: Jun-Won Lee , Hyuk-Woo Kwon , Ik-Soo Kim , Byoung-Deog Choi
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Lee IP Law, P.C.
- Priority: KR10-2018-0137152 20181109
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L21/768 ; H01L21/311 ; H01L21/02 ; H01L21/8234

Abstract:
A semiconductor device and a method of manufacturing a semiconductor device, the device including a substrate; a lower structure including pad patterns on the substrate, upper surfaces of the pad patterns being at an outer side of the lower structure; a plurality of lower electrodes contacting the upper surfaces of the pad patterns; a dielectric layer and an upper electrode sequentially stacked on a surface of each of the lower electrodes; and a hydrogen supply layer including hydrogen, the hydrogen supply layer being between the lower electrodes and closer to the substrate than the dielectric layer is to the substrate.
Public/Granted literature
- US20200152634A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-05-14
Information query
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