公开(公告)号：US11737256B2

公开(公告)日：2023-08-22

申请号：US17476663

申请日：2021-09-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun-Won Lee ,  Hyuk-Woo Kwon ,  Ik-Soo Kim ,  Byoung-Deog Choi

IPC: H10B12/00 ,  H01L21/768 ,  H01L21/311 ,  H01L21/02 ,  H01L21/8234

CPC classification number: H10B12/03 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/311 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/823468 ,  H10B12/0335 ,  H10B12/30

Abstract: A semiconductor device and a method of manufacturing a semiconductor device, the device including a substrate; a lower structure including pad patterns on the substrate, upper surfaces of the pad patterns being at an outer side of the lower structure; a plurality of lower electrodes contacting the upper surfaces of the pad patterns; a dielectric layer and an upper electrode sequentially stacked on a surface of each of the lower electrodes; and a hydrogen supply layer including hydrogen, the hydrogen supply layer being between the lower electrodes and closer to the substrate than the dielectric layer is to the substrate.

公开(公告)号：US11133317B2

公开(公告)日：2021-09-28

申请号：US16420387

申请日：2019-05-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun-Won Lee ,  Hyuk-Woo Kwon ,  Ik-Soo Kim ,  Byoung-Deog Choi

IPC: H01L27/108 ,  H01L21/768 ,  H01L21/311 ,  H01L21/02 ,  H01L21/8234

Abstract: A semiconductor device and a method of manufacturing a semiconductor device, the device including a substrate; a lower structure including pad patterns on the substrate, upper surfaces of the pad patterns being at an outer side of the lower structure; a plurality of lower electrodes contacting the upper surfaces of the pad patterns; a dielectric layer and an upper electrode sequentially stacked on a surface of each of the lower electrodes; and a hydrogen supply layer including hydrogen, the hydrogen supply layer being between the lower electrodes and closer to the substrate than the dielectric layer is to the substrate.