Invention Grant
- Patent Title: Semiconductor substrate with integrated inductive component
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Application No.: US16905197Application Date: 2020-06-18
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Publication No.: US11133375B2Publication Date: 2021-09-28
- Inventor: Benjamin Stassen Cook , Roberto Giampiero Massolini , Daniel Carothers
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Michael A. Davis, Jr.; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L49/02 ; H01L23/495 ; H01L27/06 ; H01L21/3065 ; H01L21/768 ; H01L23/498 ; H01L23/00
Abstract:
In an integrated circuit (IC), a semiconductor substrate has a first side and an opposite second side. The second side has a trench. Circuitry is on the first side. An inductive structure is within the trench. The inductive structure is connected to the circuitry through vias in the semiconductor substrate. The semiconductor substrate is mounted on a package substrate. At least a portion of the inductive structure contacts the package substrate. The circuitry is coupled to the inductive structure through wires to the package substrate.
Public/Granted literature
- US20200321430A1 SEMICONDUCTOR SUBSTRATE WITH INTEGRATED INDUCTIVE COMPONENT Public/Granted day:2020-10-08
Information query
IPC分类:
