公开(公告)号：US20180323254A1

公开(公告)日：2018-11-08

申请号：US16023377

申请日：2018-06-29

Applicant: Texas Instruments Incorporated

Inventor： Benjamin Stassen Cook ,  Roberto Giampiero Massolini ,  Daniel Carothers

IPC: H01L49/02 ,  H01L21/3065 ,  H01L23/498 ,  H01L21/768 ,  H01L23/495

Abstract: An integrated circuit (IC) includes a circuit substrate having a front side surface and an opposite back side surface. Active circuitry is located on the front side surface. An inductive structure is located within a deep trench formed in the circuit substrate below the backside surface. The inductive structure is coupled to the active circuitry.

公开(公告)号：US10692964B2

公开(公告)日：2020-06-23

申请号：US16023377

申请日：2018-06-29

Applicant: Texas Instruments Incorporated

Inventor： Benjamin Stassen Cook ,  Roberto Giampiero Massolini ,  Daniel Carothers

IPC: H01L21/00 ,  H01L49/02 ,  H01L23/495 ,  H01L27/06 ,  H01L21/3065 ,  H01L21/768 ,  H01L23/498 ,  H01L23/00

Abstract: An integrated circuit (IC) includes a circuit substrate having a front side surface and an opposite back side surface. Active circuitry is located on the front side surface. An inductive structure is located within a deep trench formed in the circuit substrate below the backside surface. The inductive structure is coupled to the active circuitry.

公开(公告)号：US20170330930A1

公开(公告)日：2017-11-16

申请号：US15152518

申请日：2016-05-11

Applicant: Texas Instruments Incorporated

Inventor： Benjamin Stassen Cook ,  Roberto Giampiero Massolini ,  Daniel Carothers

IPC: H01L49/02 ,  H01L23/495 ,  H01L21/3065 ,  H01L21/768 ,  H01L23/498

CPC classification number: H01L28/10 ,  H01L21/30655 ,  H01L21/76877 ,  H01L23/49541 ,  H01L23/49811 ,  H01L23/49827

Abstract: An integrated circuit (IC) that includes a circuit substrate having a front side surface and an opposite back side surface. Active circuitry is located on the front side surface. An inductive structure is located within a deep trench formed in the circuit substrate below the backside surface. The inductive structure is coupled to the active circuitry.

公开(公告)号：US11133375B2

公开(公告)日：2021-09-28

申请号：US16905197

申请日：2020-06-18

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Benjamin Stassen Cook ,  Roberto Giampiero Massolini ,  Daniel Carothers

IPC: H01L21/00 ,  H01L49/02 ,  H01L23/495 ,  H01L27/06 ,  H01L21/3065 ,  H01L21/768 ,  H01L23/498 ,  H01L23/00

Abstract: In an integrated circuit (IC), a semiconductor substrate has a first side and an opposite second side. The second side has a trench. Circuitry is on the first side. An inductive structure is within the trench. The inductive structure is connected to the circuitry through vias in the semiconductor substrate. The semiconductor substrate is mounted on a package substrate. At least a portion of the inductive structure contacts the package substrate. The circuitry is coupled to the inductive structure through wires to the package substrate.

公开(公告)号：US10032850B2

公开(公告)日：2018-07-24

申请号：US15152518

申请日：2016-05-11

Applicant: Texas Instruments Incorporated

Inventor： Benjamin Stassen Cook ,  Roberto Giampiero Massolini ,  Daniel Carothers

IPC: H01L21/00 ,  H01L49/02 ,  H01L21/3065 ,  H01L21/768 ,  H01L23/495 ,  H01L23/498

Abstract: An integrated circuit (IC) that includes a circuit substrate having a front side surface and an opposite back side surface. Active circuitry is located on the front side surface. An inductive structure is located within a deep trench formed in the circuit substrate below the backside surface. The inductive structure is coupled to the active circuitry.

公开(公告)号：US20200321430A1

公开(公告)日：2020-10-08

申请号：US16905197

申请日：2020-06-18

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Benjamin Stassen Cook ,  Roberto Giampiero Massolini ,  Daniel Carothers

IPC: H01L49/02 ,  H01L23/495 ,  H01L27/06 ,  H01L21/3065 ,  H01L21/768 ,  H01L23/498

Abstract: In an integrated circuit (IC), a semiconductor substrate has a first side and an opposite second side. The second side has a trench. Circuitry is on the first side. An inductive structure is within the trench. The inductive structure is connected to the circuitry through vias in the semiconductor substrate. The semiconductor substrate is mounted on a package substrate. At least a portion of the inductive structure contacts the package substrate. The circuitry is coupled to the inductive structure through wires to the package substrate.