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公开(公告)号：US12046430B2
公开(公告)日：2024-07-23
申请号：US18213296
申请日：2023-06-23
Applicant: Texas Instruments Incorporated
CPC classification number: H01H29/28 , H01H1/0036 , H01H11/00 , H01H2029/008
Abstract: A switch that includes a droplet capable of spreading between two conductors to allow them to be coupled when a voltage is applied. The droplet can be enclosed by a cap that is bonded to a wafer that the droplet is placed upon, and include metallic properties. The cap can create a cavity that may be filled by a fluid, gas, or vapor. The cavity can have multiple conductors that extend partially or fully through it. The droplet can couple the conductors when specific voltages, or frequencies are applied to them. At the specific voltage and frequency, the droplet can spread, allowing at least two conductors to be coupled.
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公开(公告)号：US11869925B2
公开(公告)日：2024-01-09
申请号：US17163766
申请日：2021-02-01
Applicant: Texas Instruments Incorporated
Inventor： Benjamin Stassen Cook , Daniel Lee Revier
CPC classification number: H01L28/10 , H01L21/56 , H01L23/3107 , H01L23/66 , H01L2223/6677
Abstract: In described examples, a method for fabricating a semiconductor device and a three dimensional structure, and packaging them together, includes: fabricating the integrated circuit on a substrate, immersing the substrate in a liquid encapsulation material, and illuminating the liquid encapsulation material to polymerize the liquid encapsulation material. Immersing the semiconductor device is performed to cover a layer of a platform in the liquid encapsulation material. The platform is a lead frame, a packaging substrate, or the substrate. The illuminating step targets locations of the liquid encapsulation material covering the layer. Illuminated encapsulation material forms solid encapsulation material that is fixedly coupled to contiguous portions of the semiconductor device and of the solid encapsulation material. The immersing and illuminating steps are repeated until a three dimensional structure is formed. The integrated circuit and the three dimensional structure are encapsulated in a single package.
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公开(公告)号：US11815526B2
公开(公告)日：2023-11-14
申请号：US17732475
申请日：2022-04-28
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Scott Robert Summerfelt , Benjamin Stassen Cook
Abstract: A method includes measuring a temperature of a semiconductor die, in which the semiconductor die includes a piezoelectric device, a pyroelectric device, and a memory. The method further includes receiving a first signal from the pyroelectric device, and based on the first signal, determining a parameter to be combined with a second signal from the piezoelectric device. The method further includes storing the parameter and the measured temperature into the memory.
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公开(公告)号：US20230335355A1
公开(公告)日：2023-10-19
申请号：US18213296
申请日：2023-06-23
Applicant: Texas Instruments Incorporated
CPC classification number: H01H29/28 , H01H11/00 , H01H1/0036 , H01H2029/008
Abstract: A switch that includes a droplet capable of spreading between two conductors to allow them to be coupled when a voltage is applied. The droplet can be enclosed by a cap that is bonded to a wafer that the droplet is placed upon, and include metallic properties. The cap can create a cavity that may be filled by a fluid, gas, or vapor. The cavity can have multiple conductors that extend partially or fully through it. The droplet can couple the conductors when specific voltages, or frequencies are applied to them. At the specific voltage and frequency, the droplet can spread, allowing at least two conductors to be coupled.
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公开(公告)号：US11774519B2
公开(公告)日：2023-10-03
申请号：US17003693
申请日：2020-08-26
Applicant: Texas Instruments Incorporated
Inventor： Yong Deng , Jo Bito , Benjamin Stassen Cook
CPC classification number: G01R33/0076 , G01R33/07 , H05K9/0045 , H05K9/0075
Abstract: In a described example, a structure includes a substrate having a surface with multiple sides. A sensor is positioned within the substrate and a seed layer is over at least four sides of the surface of the substrate. A magnetic shield layer is over the seed layer for the at least four sides of the surface of the substrate.
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Patent Agency Ranking
公开(公告)号：US11728111B2
公开(公告)日：2023-08-15
申请号：US16234243
申请日：2018-12-27
Applicant: Texas Instruments Incorporated
CPC classification number: H01H29/28 , H01H1/0036 , H01H11/00 , H01H2029/008
Abstract: A switch that includes a droplet capable of spreading between two conductors to allow them to be coupled when a voltage is applied. The droplet can be enclosed by a cap that is bonded to a wafer that the droplet is placed upon, and include metallic properties. The cap can create a cavity that may be filled by a fluid, gas, or vapor. The cavity can have multiple conductors that extend partially or fully through it. The droplet can couple the conductors when specific voltages, or frequencies are applied to them. At the specific voltage and frequency the droplet can spread allowing at least two conductors to be coupled.
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公开(公告)号：US11677156B2
公开(公告)日：2023-06-13
申请号：US17328082
申请日：2021-05-24
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Hassan Omar Ali , Richard George Wallace , Benjamin Stassen Cook , Swaminathan Sankaran , Sanjay Mohan
CPC classification number: H01Q9/045 , H01Q1/2283
Abstract: An antenna integrated in a device package is formed such that at least a portion of the antenna is elevated with respect to a substrate of the device package. The entire antenna and its functionality are positioned within a space extending vertically upwardly from a footprint of the substrate that contains circuitry of the device. The boundary of the space is defined by the perimeter of an over mold positioned on the substrate and encapsulating the circuitry.
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公开(公告)号：US11664273B2
公开(公告)日：2023-05-30
申请号：US16939383
申请日：2020-07-27
Applicant: Texas Instruments Incorporated
Inventor： Paul Merle Emerson , Benjamin Stassen Cook
IPC: H01L21/68 , H01L27/02 , H01L21/66 , H01L23/522 , H01L21/78 , H01L21/768
CPC classification number: H01L21/76838 , H01L21/76801 , H01L21/78 , H01L22/12 , H01L22/14 , H01L23/5223 , H01L23/5227 , H01L23/5228 , H01L27/0207
Abstract: An integrated circuit includes a semiconductor substrate and a metallization structure over the semiconductor substrate. The metallization structure includes: a dielectric layer having a surface; a conductive routing structure; and an electronic circuit. Over the surface of the dielectric layer, a material is configured to set or adjust the electronic circuit.
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公开(公告)号：US11551986B2
公开(公告)日：2023-01-10
申请号：US17220782
申请日：2021-04-01
Applicant: Texas Instruments Incorporated
Inventor： Steven Alfred Kummerl , Benjamin Stassen Cook
IPC: H01L23/14 , H01L21/48 , H01L23/498 , H01L21/78
Abstract: A method for forming a semiconductor structure includes curing a shape memory polymer in a first shape. The shape memory polymer is coupled to a conductive layer. The method further includes folding the shape memory polymer from the first shape into a second shape. The method also includes bonding a semiconductor wafer to the conductive layer while the shape memory polymer is in the second shape. The semiconductor wafer has first and second dies. The semiconductor wafer is then singulated to separate the first die from the second die. The method further includes expanding the shape memory polymer to its first shape and singulating the shape memory polymer to separate the first and second dies.
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公开(公告)号：US20220189903A1
公开(公告)日：2022-06-16
申请号：US17679087
申请日：2022-02-24
Applicant: Texas Instruments Incorporated
Inventor： Benjamin Stassen Cook , Ralf Muenster , Sreenivasan Kalyani Koduri
IPC: H01L23/00 , H01L23/367 , H01L23/15 , H01L23/495 , H01L23/373
Abstract: In some examples, a system comprises a set of nanoparticles and a set of nanowires extending from the set of nanoparticles.
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