Invention Grant
- Patent Title: Film forming method, storage medium, and film forming system
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Application No.: US15997788Application Date: 2018-06-05
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Publication No.: US11141758B2Publication Date: 2021-10-12
- Inventor: Kentaro Yoshihara , Yuichi Yoshida , Naoki Shibata , Kousuke Yoshihara
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Posz Law Group, PLC
- Priority: JPJP2017-119627 20170619
- Main IPC: B05D3/10
- IPC: B05D3/10 ; B05D3/06 ; B05D1/00 ; B05C5/00 ; H01L51/00 ; H01L21/027 ; H01L21/3105
Abstract:
A film forming method for forming a coating film by applying a coating solution onto a substrate having projections and recesses formed on a surface thereof by a predetermined pattern, includes: applying the coating solution onto the surface of the substrate to form a thick film having a depth of projections and recesses on a surface of the film of a predetermined value or less and having a film thickness larger than a target film thickness of the coating film; and removing the surface of the thick film to form the coating film having the target film thickness.
Public/Granted literature
- US20180361428A1 FILM FORMING METHOD, STORAGE MEDIUM, AND FILM FORMING SYSTEM Public/Granted day:2018-12-20
Information query
