Invention Grant
- Patent Title: Storage element, semiconductor device, magnetic recording array, and method of producing storage element
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Application No.: US16829188Application Date: 2020-03-25
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Publication No.: US11145345B2Publication Date: 2021-10-12
- Inventor: Atsushi Tsumita , Yohei Shiokawa , Eiji Komura
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JPJP2019-063308 20190328
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01L43/10 ; H01L43/12 ; H01L43/08 ; H01L27/11597

Abstract:
A storage element includes a first ferromagnetic layer; a second ferromagnetic layer; a nonmagnetic layer that is sandwiched between the first ferromagnetic layer and the second ferromagnetic layer in a first direction; a first wiring which extends in a second direction different from the first direction, and the first wiring being configured to sandwich the first ferromagnetic layer with the nonmagnetic layer in the first direction; an electrode which sandwiches the second ferromagnetic layer at least partially with the nonmagnetic layer in the first direction; and a compound part which is positioned inside the electrode and has a lower thermal conductivity than the electrode.
Public/Granted literature
- US20200312392A1 STORAGE ELEMENT, SEMICONDUCTOR DEVICE, MAGNETIC RECORDING ARRAY, AND METHOD OF PRODUCING STORAGE ELEMENT Public/Granted day:2020-10-01
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