- 专利标题: Transistor gate arrangement to modify driver signal characteristics
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申请号: US16882634申请日: 2020-05-25
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公开(公告)号: US11145651B2公开(公告)日: 2021-10-12
- 发明人: Yew Keong Chong , Sriram Thyagarajan , Kumaraswamy Ramanathan , Damayanti Datta
- 申请人: Arm Limited
- 申请人地址: GB Cambridge
- 专利权人: Arm Limited
- 当前专利权人: Arm Limited
- 当前专利权人地址: GB Cambridge
- 代理机构: Pramudji Law Group PLLC
- 代理商 Ari Pramudji
- 主分类号: H01L27/092
- IPC分类号: H01L27/092 ; H01L29/78 ; H01L21/8238 ; G11C11/40 ; H03K3/012
摘要:
Briefly, embodiments of claimed subject matter relate to devices and methods for modifying, such as decreasing rise time and/or fall time, of a driver signal output. To achieve such modifications in driver output signals, additional gates may be positioned at PMOS and/or NMOS regions of a semiconductor film. In addition, at least in particular embodiments, etching of portions of one or more semiconductor regions may increase compressive or tensile stress, which may further operate to modify driver output signals.
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