公开(公告)号：US10665591B2

公开(公告)日：2020-05-26

申请号：US16122752

申请日：2018-09-05

申请人： Arm Limited

发明人： Yew Keong Chong ,  Sriram Thyagarajan ,  Kumaraswamy Ramanathan ,  Damayanti Datta

IPC分类号： H01L27/092 ,  H01L29/78 ,  H01L21/8238 ,  G11C11/40 ,  H03K3/012

摘要： Briefly, embodiments of claimed subject matter relate to devices and methods for modifying, such as decreasing rise time and/or fall time, of a driver signal output. To achieve such modifications in driver output signals, additional gates may be positioned at PMOS and/or NMOS regions of a semiconductor film. In addition, at least in particular embodiments, etching of portions of one or more semiconductor regions may increase compressive or tensile stress, which may further operate to modify driver output signals.

公开(公告)号：US20200075591A1

公开(公告)日：2020-03-05

申请号：US16122752

申请日：2018-09-05

申请人： Arm Limited

发明人： Yew Keong Chong ,  Sriram Thyagarajan ,  Kumaraswamy Ramanathan ,  Damayanti Datta

IPC分类号： H01L27/092 ,  H01L29/78 ,  H03K3/012 ,  G11C11/40 ,  H01L21/8238

摘要： Briefly, embodiments of claimed subject matter relate to devices and methods for modifying, such as decreasing rise time and/or fall time, of a driver signal output. To achieve such modifications in driver output signals, additional gates may be positioned at PMOS and/or NMOS regions of a semiconductor film. In addition, at least in particular embodiments, etching of portions of one or more semiconductor regions may increase compressive or tensile stress, which may further operate to modify driver output signals.

公开(公告)号：US11145651B2

公开(公告)日：2021-10-12

申请号：US16882634

申请日：2020-05-25

申请人： Arm Limited

发明人： Yew Keong Chong ,  Sriram Thyagarajan ,  Kumaraswamy Ramanathan ,  Damayanti Datta

IPC分类号： H01L27/092 ,  H01L29/78 ,  H01L21/8238 ,  G11C11/40 ,  H03K3/012

摘要： Briefly, embodiments of claimed subject matter relate to devices and methods for modifying, such as decreasing rise time and/or fall time, of a driver signal output. To achieve such modifications in driver output signals, additional gates may be positioned at PMOS and/or NMOS regions of a semiconductor film. In addition, at least in particular embodiments, etching of portions of one or more semiconductor regions may increase compressive or tensile stress, which may further operate to modify driver output signals.

公开(公告)号：US20200286888A1

公开(公告)日：2020-09-10

申请号：US16882634

申请日：2020-05-25

申请人： Arm Limited

发明人： Yew Keong Chong ,  Sriram Thyagarajan ,  Kumaraswamy Ramanathan ,  Damayanti Datta

IPC分类号： H01L27/092 ,  H01L29/78 ,  H01L21/8238 ,  G11C11/40 ,  H03K3/012

摘要： Briefly, embodiments of claimed subject matter relate to devices and methods for modifying, such as decreasing rise time and/or fall time, of a driver signal output. To achieve such modifications in driver output signals, additional gates may be positioned at PMOS and/or NMOS regions of a semiconductor film. In addition, at least in particular embodiments, etching of portions of one or more semiconductor regions may increase compressive or tensile stress, which may further operate to modify driver output signals.